DI7A6N10SQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI7A6N10SQ
MOSFET, SO-8, N, 100V, 7.6A, 20mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI7A6N10SQ
DI7A6N10SQ Single
Type SMD
Package SO-8
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 7.600 A
On-Resistance 1 RDSon1 0.0200 Ω
@ ID 7.500 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 0.0280 Ω
@ ID 6.800 A
@ VGS 6 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 2.500 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 200.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 14 ns
Rise Time tr 20 ns
Turn-Off Delay Time tD(off) 37 ns
Fall Time tf 27 ns
Total Gate Charge (10V) Qg (10V) 22.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 6 nC
Single pulse avalanche energy Eas 416.0 mJ
Input Capacitance Ciss 1650 pF
Output Capacitance Coss 330 pF
Reverse Transfer Capacitance Crss 70 pF
Reverse recovery charge Qrr 90 nC

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