DI7A6N10SQ
MOSFETs (Field Effect Transistors)
Product information
| Product family | MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection |
|---|---|
| Article description |
DI7A6N10SQ
MOSFET, SO-8, N, 100V, 7.6A, 20mΩ, 150°C |
| Minimum order quantity | 4.000 |
| Stock | 0 |
| Customs Tariff Number | 85412900 |
| Origin | CN |
| RoHS / REACH | Yes |
Downloads & Links
Technical data
| Article number | DI7A6N10SQ | |
|---|---|---|
|
||
| Type | SMD | |
| Package | SO-8 | |
| Qualification | Industrial Grade | |
| Config | Single | |
| Life Cycle | active | |
| ESD sensitive | No | |
| ESD protected | No | |
| pol | N | |
| VDS | 100 V | |
| ID | 7.600 A | |
| RDSon1 | 0.0200 Ω | |
| @ ID | 7.500 A | |
| @ VGS | 10 V | |
| ID | ||
| RDSon2 | 0.0280 Ω | |
| @ ID | 6.800 A | |
| @ VGS | 6 V | |
| Tjmax | 150 °C | |
| Ptot | 2.500 W | |
| @ TLoc | ||
| Location | ||
| Avalanche | Yes | |
| IDM | 200.000 A | |
| VGSth min | 2.0 V | |
| VGSth max | 4.0 V | |
| tD(on) | 14 ns | |
| tr | 20 ns | |
| tD(off) | 37 ns | |
| tf | 27 ns | |
| Qg (10V) | 22.0 nC | |
| Qg (4.5V) | ||
| Qgd | 6 nC | |
| Eas | 416.0 mJ | |
| Ciss | 1650 pF | |
| Coss | 330 pF | |
| Crss | 70 pF | |
| Qrr | 90 nC | |
News and Updates
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- 应用 Application Note Reverse Polarity Protection cn > application-notes > application-note-reverse-polarity-protection-2455
- 最新动态 关于电源的新应用说明 cn > latest-news > new-application-note-about-power-supplies-34ac6277
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Application Reference Diagrams
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