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Diotec Semiconductor introduces its latest Silicon Carbide MOSFET DIF065SIC020, which features an exceptionally low RDS(on) values of 20mΩ. It is encapsulated in the new TO-247-4L, consisting a fourth lead, also known as Kelvin Source. It enables faster switching speeds, lower power losses and higher reliability. This makes the ideally suited for a comprehensive portfolio of various applications: Data server power supplies, photovoltaic inverters, industrial motor drives and power conversion systems.

In the context of power electronics, where industries seek to improve energy efficiency, SiC is emerging as a promising next-generation technology. It promises superior capabilities that outperform conventional silicon-based Power MOSFETs or IGBTs, due to higher voltage breakdown and significantly reduced power dissipation. The implementation of wide bandgap technology facilitates these devices to operate reliably in extreme temperature applications. With comparatively lower on-state resistance, SiC MOSFETs generate lower switching losses per cycle and significantly improve efficiency while maintaining higher switching speed in a power conversion system. As a result, SiC MOSFETs are emerging as the primary solution for various applications, especially those requiring high voltage switching at very high frequencies – where Si-based MOSFETs and IGBTs are clearly limited.

Features

• High reverse breakdown voltage
• Advanced Planar technology
• Extremely low on-state resistance
• Fast switching time with low capacitance
• Low Gate charge
• Low total switching energy

Applications

• Power supplies for Data Server
• Charging systems for electric vehicles (EV)
• Solar inverters
• Uninterruptible Power Supply (UPS)
• Power Factor Correction (PFC)
• Switched-mode power supply (SMPS)
• DC/DC converters
• Industrial drives and supplies

Specifications

• 650 V drain-source voltage (VDSS)
• Maximum 20 mΩ on-state resistance (RDSon)
• 100 µA drain-source leakage current (IDSS)
• From to -10 V to 22 V continuous gate-source-voltage (VGSS)
• Recommended turn-on Gate voltage VGS(on)of 18 V
• Recommended turn-off Gate voltage VGS(off)of -5 V
• 550 W power dissipation (Ptot)
• Up to 150 A peak drain current (IDM)
• 0.38 K/W maximum thermal resistance (RthC)
• -55°C to +175°C operating junction temperature range (Tj)
• Industrial standard case outline TO-247 with 4 leads and Kelvin Source

With the DIF065SIC020, Diotec reinforces its commitment to powering the next generation of energy solutions with durable, high-efficiency SiC technology. Whether you're designing for data server, solar, industrial, or EV applications, this MOSFET is engineered to meet the demands of modern power systems.

Contact us today to request samples or learn more about how SiC MOSFETs can upgrade your next project.

The electrification of our environment is becoming more widespread every day, reflecting the growing demand for more environmentally friendly and sustainable energy sources. As a result, electric motors are becoming increasingly important in this transition. Whether implemented with BLDC or AC motors, their versatility is remarkable, from cooling your body perfectly on a hot summer's day to powering your fancy electric vehicle for your daily commute. However, the biggest question remains: how can we further improve our ability to efficiently drive extremely large amounts of energy for these highly demanding applications?

Traditionally, designers would always choose to parallel 2 or 3 MOSFETs together. However, in most cases, when driving BLDCs with the conventional MOSFETs, this approach would often require a certain level of circuit complexity, as they need to be turned on simultaneously to avoid any further complication. In this scenario, two options could be suggested: Driving from a single unified gate drive or individual gate drives for each of the MOSFETs. The latter would increase the overall cost of the circuit, while not proving to be effectively better, as the designer would still have to overcome the propagation time between them. Therefore, the former method is preferred in most cases. In addition, paralleling MOSFETs is not as simple as it sounds, as many factors need to be taken into account, such as selecting an appropriate gate resistance and implementing a snubber circuit to suppress the effect of stray inductance in the PCB. If not implemented correctly, it could cause internal destruction due to the uneven load distribution and threshold voltage deviation expected from its "positive temperature coefficient" nature. Save yourself the headache and opt for our exclusive new DIW120SIC028 which could be your potential missing piece of the puzzle and driving the ever increasing power demanding BLDC motor would never be difficult.

Data servers are on duty 24/7, allowing us to communicate whenever we want, but also ensuring that all our electronic-based daily lives run smoothly and safely - and that's not all we could think of. A failure in the server supply can cause expensive losses and, in the worst case, lead to critical situations - just think of emergency calls, health services or air traffic control. For this reason, server stations are always equipped with a battery back-up, operating on either 24 V or 48 V DC.

The battery management and charging circuit is controlled by low-voltage electronics at 5V or even 3.3V, the typical supply voltage for microcontrollers. These supply voltages must be generated from the higher battery levels. As the circuits operate in stand-alone mode without human intervention, there is no need to use isolated switching topologies. A simple step-down or buck converter can do the job with high efficiency and the required reliability. It consists of a MOSFET and a so-called buck diode, usually a Schottky. These are chosen for their low forward voltage drop and low switching losses.

As a rule of thumb, the safety margin between the DC voltage and the allowable Schottky reverse voltage should be between three and six times the DC level. Only then can reliable operation be guaranteed, ensuring that potential voltage spikes remain well below the maximum ratings of the Schottky diode. The SK220SMA by Diotec Semiconductor is a high voltage Schottky diode offering an admissible reverse voltage of 200 V and forward current of nominal 2 A. It comes in the small yet powerful DO-214AC/SMA case outline measuring just 5 by 2.7 mm. Forward voltage drop is less than 950 mV at 2 A, and reverse leakage below 50 µA at 200 V, all at 25°C. This makes the parts ideally suited as buck diodes used in battery back-up systems of data servers.

Diotec Semiconductor introduces the GBI25J-LV, a cutting-edge bridge rectifier in a GBI single inline case, designed to significantly enhance energy efficiency in server power supplies. This new component offers a 10% lower forward voltage drop per single diode compared to the standard GBI25J model. As two diodes conduct per mains half-cycle, the total power savings reach an impressive 20% at the input bridge.

This innovative rectifier is optimized for power supplies that run continuously, such as those used in internet server stations, data centers, and industrial applications. With a nominal output current of 25 A when the case is maintained at 80°C, the GBI25J-LV ensures reliable and efficient operation. It also boasts a forward surge current rating of 325/360 A at 10/8.3 ms half sine wave pulse and a repetitive peak reverse voltage of 600 V.

Key Features:

• Low Vf diodes for reduced power loss
• Energy savings of up to 20%
• Compact single inline case
• Protected against reverse assembly
• Easy heatsink assembly
• High forward surge current capability

Ideal Applications:

• 24/7 power supply systems
• Server stations and computer networks
• Base stations
• Industrial control systems and drives

Technical Specifications:

• Nominal output current: 25 A at 80°C case temperature (IFAV)
• Peak reverse voltage: 600 V (VRRM)
• Forward voltage: < 0.92 V at 12.5 A / 25°C (VF)
• Reverse current: < 5 µA at 1000 V / 25°C (IR)
• GBI single inline case

With its energy-saving capabilities and robust performance, the GBI25J-LV bridge rectifier is a game-changer for power-hungry applications requiring continuous operation. Designed for efficiency and reliability, it is the perfect choice for businesses looking to optimize power supply performance and reduce operational costs.