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The SI02C120SMA by Diotec Semiconductor is a 2 A / 1200 V Silicon Carbide Schottky Diode encapsulated in the compact DO-214AA (SMA) package. It features a high breakdown voltage of 1200 V combined with an extremely low reverse recovery charge and intrinsic junction capacitance hence improved its reliability in highly demanding application. Hence, this would pose SI02C120SMA as an optimum Bootstrap Diode in driving high-side (HS) configuration SiC-MOSFET.

Driving a HS SiC-MOSFET poises a significant challenge due to its floating Source Voltage node, VS, which reaches several hundred volts in a typical application. Hence, to effectively turn on the SiC-MOSFET, the gate voltage, Vg, must be biased sufficiently above the Vs. One of the most cost-effective methods to achieve this is through bootstrapping. However, conventional bootstrap circuits may face limitations especially in duty cycle and operating frequency, primarily due to the fast repetitive charging time of the bootstrap capacitor. These limitations could be substantially mitigated by our newly released SI02C120SMA. Its ability to withstand higher-intensity and repetitive peak forward currents could eliminate the need for a bootstrap resistor, thereby speeding up the charging and discharging process. Furthermore, its favourable smaller junction capacitance helps suppress any possible EMI-induced ringing and reduce the possibility of false Undervoltage Lockout (UVLO) triggering by the gate driver. The diode’s robust performance under demanding environment surpasses even that of the soft recovery ultra-fast silicon diode, making it a superior replacement in the selection of bootstrapping diode.

Features

• High reverse breakdown voltage
• Almost zero switching losses
• Low reverse leakage current
• High efficiency high frequency switching
• Compact SMD package
   

Applications

• Auxiliary Power Supply
• Solar inverters
• Telecom power supplies
• Power factor correction
   

Specifications

• 2 A average forward current at 160°C (IFAV)
• 1200 V repetitive reverse voltage (VRRM)
• Typical forward voltage 1.40 V V at 2 A and 25°C (VF)
• Typical reverse leakage 2 µA at 1200 V and 175°C (IR)
• Total capacitive charge 16 nC at 800 V, 2 A, 200 A/µs [QC)
• DO-214AC (SMA) case outline

The Local Interconnect Network (LIN), also known as the LIN bus, is a serial fieldbus for networking sensors, actuators and human-machine interfaces in automotive applications. CXPI (Clock eXtension Peripheral Interface) was developed to overcome certain disadvantages of the widely used LIN bus, but largely shares the physical layer with it. Needless to say that such bus systems require ESD protection, since they are highly affected by human-induced discharges according to the standard IEC 61000-4-2 human body model (HBM).

The automotive standard ISO 16750-2 requires in addition during jump start an overvoltage capability of +24 V, and for reverse battery events an undervoltage of -15 V. ESD protection diodes must overcome both voltage ranges, and are ideally in asymmetric configuration. The ESDB1524GW-AQ was developed for such requirement, and offers a comfortable ESD capability of ± 30 kilovolts. Its high peak pulse power and low reverse leakage currents address the particular needs of LIN and CXPI buses.

Features

• High ESD capability
• Asymmetric configuration according to ISO 16750-2:
• +24 V for jump start
• -15 V for reverse battery
• Compliant to ROHS, REACH, Conflict Minerals
• AEC-Q101 qualified

Applications

• LIN and CXPI bus protection
• ESD protection
• Data line & I/O port protection
• Human-machine interfaces
• Automotive Gateway Protection

Specifications

• +24 V stand-off voltage in forward (VWM1)
• -15 V stand-off voltage in reverse (VWM2)
• ESD capability of ± 30 kV (VPP)
• Peak pulse power at 8/20 µs pulse 200 W (PPPM)
• Maximum reverse current 50 nA (ID)

The heart of any industrial or domestic control device is either a microcontroller, a PLC (Programmable Logic Controller) or an IPC (Industrial PC). It handles the data processing, logic control, and interfacing. The latter includes digital inputs and outputs for status and PWM signals, switches or relays. Analog inputs measure variables such as temperature, brightness or frequency, while the outputs provide signal voltages or currents. Communication with other devices works via special interfaces such as Profibus, Profinet, EtherNet/IP, CANopen, Modbus or KNX. The power supply runs on typical input voltages of 24 VDC, 48 VDC or 110/230 VAC; sometimes, communication data are transferred via the power line itself.

Diotec provides dedicated semiconductor components acting between the microcomputer device and its surrounding. This Application Note introduces it.

德欧泰克半导体推出的PW4512是一款高性能标准恢复整流二极管，专为严苛的功率应用而设计。该器件具备1200V的重复反向电压与45A的最大平均正向电流，可在工业及高功率环境中提供可靠性能。

PW4512采用行业标准TO-247-2L封装，具备出色的散热性能，并便于安装散热器。其在45A、25℃条件下的正向压降低于1.1V，有助于提升系统效率并减少功率损耗。该器件还支持高达300A（10ms）的浪涌电流能力，确保在瞬态条件下的稳健运行。

因此，PW4512非常适合用于电池供电系统（如数据服务器或通信基站的备用电源、UPS或太阳能水泵）中的极性保护或OR-ing电路、工业电源的输入整流、电机驱动以及逆变器等应用。

主要特性

• 高耐压能力（1200V）
• 高正向电流额定值（45A）
• 低正向压降（45A、25℃时小于1.1V）
• 高浪涌电流能力（300A，10ms）
• 高功耗承受能力
• 便于安装散热器（TO-247-2L封装）
• 行业标准封装外形
   

典型应用

• 数据服务器备用电源
• 通信基站
• 电机驱动
• 极性保护
• OR-ing电路
• 逆变器
• 电池充电器
• 不间断电源（UPS）
   

规格参数

• 平均正向电流（IFAV）：45A
• 重复反向电压（VRRM）：1200V
• 正向压降（VF）：45A、25℃时小于1.1V
• 浪涌电流（IFSM）：300A（10ms）
• 恢复时间：1500ns（标准恢复)
• 封装：TO-247-2L

PW4512集高耐压能力、强浪涌耐受性和高效散热性能于一体，为工业功率转换与保护应用提供了可靠的解决方案。