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Keeping (H)EVs Cool Under Pressure – Cooling Pump Driven by Diotec's 65 A / 80 V Power MOSFETs DI065N08D1-AQ in D-PAK

Diotec's 65 A / 80 V Power MOSFETs DI065N08D1-AQ in D-PAK

As electric vehicles continue to evolve, the demands on their thermal management systems grow more challenging. Fast charging, high-performance powertrains, and multi-motor configurations all generate significant heat that must be effectively controlled to ensure efficiency and longevity. A crucial component in this process is the coolant pump – driven by a brushless DC (BLDC) motor, delivering 120 W to 300 W in 12 V to 48 V systems.

At the heart of these BLDC motor drives is the power stage, where efficiency, reliability, and robustness matter most. This is where the DI065N08D1-AQ from Diotec Semiconductor excels.

Designed for Demanding Automotive Environments
The DI065N08D1-AQ is a 65 A / 80 V Power MOSFET, packaged in a compact TO-252AA (D-PAK), specifically developed for high-performance automotive applications such as coolant pumps, fan drives, battery management systems, and DC-DC converters.

With a typical RDS(on) of just 5.5 mΩ, low gate charge, and logic-level gate drive, this MOSFET offers excellent efficiency and fast switching behavior—ideal for modern motor control strategies. Its 175°C maximum junction temperature rating and avalanche robustness ensure long-term reliability, even under harsh thermal and electrical stress.

Key Features:

  • Logic-level gate drive for simplified control
  • Very low on-state resistance for high efficiency
  • Fast switching times for optimized motor control
  • Low gate charge to minimize driver power losses
  • Excellent thermal performance
  • Avalanche rated for rugged, real-world operation

Applications:

  • BLDC Motor Controllers (e.g., EV coolant pumps and auxiliary drives)
  • Battery Management Systems (BMS)
  • DC-DC Converters
  • Switching Power Supplies
  • General high-efficiency switching applications

Technical Specifications (Highlights): 

  • 80 V drain-source voltage (VDSS)
  • 65 A continuous drain current (ID)
  • Typical 5.5 mΩ on-state resistance (RDS(on))
  • 1 µA drain-source leakage current (IDSS)
  • 62.5 W power dissipation (Ptot)
  • 300 A peak drain current (IDM)
  • 52 A continuous body-diode current (IS)
  • 100 A peak body-diode current (ISM)
  • 25.6 mJ single pulse avalanche energy (EAS)
  • < 2.4 K/W thermal resistance junction to case (RthC)
  • -55°C to +175°C maximum operating junction temperature range (Tj)

Compact Power, High Performance: Meet the LDI51-4.0EN-AQ Ultra-Low Dropout Regulator

LDI51-4.0EN-AQ Linear Voltage Regulator

Designed to deliver up to 500 mA output current with exceptional stability and efficiency, the LDI51-4.0EN-AQ from Diotec is a high-performance, fixed +4.0 V low dropout (LDO) voltage regulator. Housed in a compact SOT-23-5 package, it offers ultra-low quiescent current and a very low dropout voltage, as well as built-in thermal overload and short circuit protection, ensuring reliable performance even in demanding environments.

This cost-effective power regulation solution is suitable for any kind of automotive systems. Typical applications include automotive clusters, battery backup regulated supplies, antenna power feeds and post-regulation for DC-DC converters.

 

Key features:

  •  Ultra-low dropout operation
  • Very low quiescent current
  • Tight output voltage tolerance (±2%)
  • Integrated thermal overload and short-circuit protection
  • Low power consumption
  • Enable (ON/OFF) function

 

Typical applications:

  • Automotive instrument clusters
  • Battery-backed power systems
  • RF and antenna power sourcing.

 

Specifications:

  • Input voltage: up to 18 V
  • Output current: up to 500 mA
  • Dropout voltage of only 120 mV at 100 mA.
  • Quiescent current as low as 1 µA.
  • Compact SOT-23-5 package.

NUP3105L-AQ: Reliable ESD Protection for Automotive CAN and LIN Bus Systems

NUP3105L-AQ ESD Protection Diodes

The NUP3105L-AQ from Diotec is a high-performance ESD protection diode designed to safeguard sensitive data lines in automotive communication networks such as CAN and LIN bus systems. With an ultra-low capacitance of just 30 pF and ESD protection up to 30 kV, it ensures signal integrity while providing robust protection against electrostatic discharge events.

Offering bidirectional protection for each data line, the NUP3105L-AQ delivers a peak pulse power capability of 295 W (8/20 µs) and maintains a very low reverse leakage current (<1 µA). The device comes in a compact SOT-23 package, it is AEC-Q101 qualified and PPAP capable, making it an ideal choice for automotive and industrial designs that demand long-term reliability.

Key Features:

  • Automotive-grade ESD protection diode
  • Bidirectional protection for data and I/O lines
  • Ultra-low capacitance (30 pF) to preserve signal integrity
  • Very low reverse leakage current (<1 µA)
  • Peak power dissipation up to 295 W (8/20 µs)
  • AEC-Q101 qualified and compliant with RoHS, REACH, and Conflict Minerals

Typical Applications:

  • CAN and LIN bus protection
  • Data line and I/O port ESD protection
  • Automotive gateway modules
  • Protection for USB, HDMI, Ethernet and sensor interfaces
  • Microcontroller-based systems

Key Specifications:

  • Stand-off voltage (VWM): 32 V
  • ESD immunity ± 30 kV
  • Maximum junction temperature (Tj max): 125°C
  • Maximum reverse current (IR): 1 µA

BAV99L-AQ: High-Speed Dual Small Signal Diode for 48 V Telecom and (H)EV Battery Systems

BAV99L-AQ High-Speed Dual Small Signal Diode

The BAV99L-AQ from Diotec is a dual small signal diode designed for universal use in 48 V telecom backup systems and (hybrid) electric vehicle ([H]EV) battery management systems (BMS). With a switching time of under 4 nanoseconds, a peak reverse voltage of 100 V and a forward current of 2 × 125 mA, it protects sensitive components while enabling reliable, high-speed logic paths.

Battery Management Systems play a critical role in multi-cell configurations, maximizing safety, reliability, and battery lifespan.

They monitor state of charge (SOC) and state of health (SOH), and prevent thermal risks, over/under voltage, overcurrent, short circuits and overheating. They also manage cell balancing, control charge/discharge and communicate with chargers or control units.

The BAV99L-AQ is perfectly suited for these tasks:

  • Steering fast transients to ground or battery rails in rail clamp configurations
  • Protecting microcontrollers, sensors, and MOSFETs from voltage spikes
  • Free-wheeling small relay coils (forward surge capability 1 A for 1 ms)
  • Isolating signals from reverse currents at sensor outputs or gateway ports

Its low capacitance (<2 pF) and ultra-fast switching make it ideal for distribution logic, alarm limits, and status flags. The fully AEC-Q101-qualified BAV99L-AQ is available in high volumes and provides a reliable, high-performance solution for automotive and telecommunications applications.

Key Features:

  • Dual diodes in series configuration
  • High-speed switching (<4 ns)
  • AEC-Q101 qualified

Applications:

  • Automotive electronics and digital dashboards
  • Infotainment systems
  • Telecom backup supplies
  • Lighting controls

Specifications:

  •  Repetitive reverse voltage (VRRM): 100 V
  • DC blocking voltage (VDC): 75 V
  • Average forward current: 125 mA with both diodes loaded, or 250 mA with a single diode loaded.
  • Typical forward voltage (VF): <0.855 V at 10 mA, 25°C
  • Package: SOT-23

BC846S: Dual NPN Transistor in Compact SOT-363 Package for Universal Switching and Amplifying Purposes

BC846S Bipolar Transistors by Diotec Semiconductor

The BC846S from Diotec Semiconductor is a dual NPN transistor designed to deliver the trusted performance of the industry-standard BC846, now in a space-saving SOT-363 package. Both transistors support a continuous collector current of 100 mA, a peak of 200 mA, and a maximum collector-emitter voltage of 45 V, with a typical DC current gain of 290. This makes them ideal for amplifying low input signals as well as various switching applications.

Thanks to its dual configuration in a single compact package, the BC846S helps to save valuable PCB space while maintaining robust performance. Typical applications include LED lighting, consumer electronics, and household appliances such as vacuum cleaners, hairdryers, shavers, power tools, and kitchen appliance.

Key Features:

  • Dual NPN transistor in one package
  • Space-saving SOT-363 case outline
  • Industry-standard BC846 parameters
  • Suitable for universal amplification and switching

Applications:

  • LED lighting systems
  • Consumer devices
  • Vacuum cleaners, hair dryers, and shavers
  • Power tools
  • Kitchen appliance

Key Specifications:

  • Collector current (IC): 100 mA nominal, 200 mA peak
  • Collector-emitter voltage (VCEO): 45 V
  • DC current gain (hFE): typ. 290 at 2 mA / 5 V
  • Total power dissipation (Ptot): 150 mW at 25°C
  • Package: SOT-363

研究发现热界面应用中的微小变化可导致电源转换器长期效率损失

Small Variations in Thermal Interface Application Found to Drive Long-Term Efficiency Losses in Power Converters

最新工业电源转换系统可靠性评估显示，热界面材料应用不一致会导致可测量的效率损失与长期热降解。尽管散热问题常被归咎于电路布局或负载条件，但是工程师们逐渐发现根本的症结其实隐藏在散热器组件内部。

根据多领域制造现场的实测数据，散热膏厚度与分布状态的微小差异可能引发低至0.1 K/W的热阻变化——该量级足以导致设备性能随时间产生渐进式偏移。这些偏差在初始测试阶段可能并不明显，但会在持续热循环过程中不断累积。

常见影响因素:

  • 过量或不足的热膏体积
  • 接触表面的不均匀涂布
  • 缺失或错位的界面层

“这些是微小的制造环节，但会带来系统级的影响，”参与分析的Diotec工程师指出。“稳定的热路径不仅取决于元器件的选型，还取决于元器件与散热器之间接触面的均匀性。”

Diotec对功率肖特基二极管进行了一项引人注目的对比测试，这些二极管均经历了高温反向偏压测试（HTRB）。在部件与散热器之间未使用散热膏的情况下，仅135小时后就有36/77个样品发生失效，且反向电流（Ir）出现热失控。而正确涂抹散热膏时，0/77个样品失效，反向电流在超过1000小时后仍保持稳定数值。

这些发现突显了电子产品可靠性中一个更广泛的原则：性能不仅由材料或设计决定，还由连接它们与环境界面的稳定性决定。

德欧泰克——制造可靠性测试仪——采用自主元件

Diotec-Built Reliability Tester – Powered by Our Own Components

品质之路上，我们不止于测试，更致力于创新。

以高温反向偏压（HTRB）测试系统为例：该设备对验证二极管、晶体管、MOSFET和IGBT等半导体元器件在高压高温极端工况下的长期可靠性至关重要。

可靠性测试既是新产品认证的核心环节，也是日常生产质控的关键步骤。而德欧泰克在此领域实现了双重突破：

  • 自主设计制造专用测试设备，精准匹配产品特性
  • 控制电路均采用德欧泰克自产元器件，在严苛环境中完成"实景验证"

以下是嵌入HTRB测试系统主控板的部分德欧泰克元器件：

  • 1N4148WS - 小信号二极管, SOD-323F, 100V, 0.15A, 150°C
  • SM4007 - 二极管, MelfF, 1000V, 1A, 175°C
  • BZT52B15 - 齐纳二极管, SOD-123F, 15V, 0.5W, ±2%
  • SL1M - 二极管, SOD-123FL, 1000V, 1A, 150°C
  • ZMD15B - 齐纳二极管, MiniMelf, 15V, 1W, ±2%
  • MM3Z4B7 - 齐纳二极管, SOD-323F, 4.7V, 0.3W, ±5%, AEC-Q101
  • Z1SMA6.8 - 齐纳二极管, SMA, 6.8V, 1.5W, ±5%
  • BC807-25 - 双极晶体管, SOT-23, 45V, 800mA, PNP, 0.31W, 150°C 
  • BC817-25 - 双极晶体管, SOT-23, 45V, 800mA, NPN, 0.31W, 150°C
  • BCM847BS - 双极晶体管, SOT-363, 45V, 100mA, NPN, 0.25W, 150°C
  • DI78L12UAB - 稳压器, SOT-89, 35V, 11.5V, 12.5V, 125°C, 6mA

当我们宣称"可靠性验证"时，意味着从芯片到系统全程植入德欧泰克的技术基因。

SI02C065SMB——专为SiC MOSFET设计的鲁棒性短路保护机制

Introducing the SI02C065SMB - Robust Short-Circuit Protection for SiC MOSFETs

随着高效高频功率电子设备需求激增（尤其在电动汽车、太阳能逆变器和通信基础设施领域），碳化硅MOSFET正成为下一代设计的核心器件。然而相比IGBT（短路耐受时间约10μs），其更短的短路耐受时间（SCWT约2μs）要求超高速保护方案。

德欧泰克半导体的创新解决方案应运而生。

SI02C065SMB是一款采用紧凑型DO-214AA（SMB）封装的2A/650V碳化硅肖特基二极管，专为保护碳化硅MOSFET短路工况的退饱和检测电路设计。

核心特性：

  • 2A平均正向电流（IFAV）
  • 650V重复峰值反向电压（VRRM）
  • 2A/25℃条件下最大正向电压1.6V（VF）
  • 650V/25℃条件下最大反向漏电流50μA（IR）
  • 400V/2A/-200A/μs条件下总电容电荷5nC（QC）
  • DO-214AA封装外形

典型应用：

  • 汽车辅助电源模块
  • 太阳能逆变器
  • 通信电源系统

凭借低开关损耗与高耐压特性，SI02C065SMB已成为现代碳化硅（SiC）系统中实现鲁棒高速保护的理想选择。