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DI050N04BPT-AQ - Compact Automotive Power MOSFET with Outstanding Efficiency
The DI050N04BPT-AQ from Diotec Semiconductor is a high-performance, automotive-grade N-channel power MOSFET housed in an ultra-compact PowerQFN 3x3 package. Designed for space-critical automotive applications, it combines high current capability with exceptional efficiency.
With a continuous drain current of 50 A and a typical on-state resistance of 5.5 mΩ (maximum 7 mΩ), the DI050N04BPT-AQ ensures minimal conduction losses. Its fast switching performance, low gate charge, and very low thermal resistance make it an ideal solution for compact, efficient motor control systems.
The DI050N04BPT-AQ is optimized for logic-level operation, reducing power losses and enhancing overall system efficiency. Built to perform reliably in harsh environments, it has an operating junction temperature range of -55°C to +175°C.
Features
- Advanced Trench Technology
- Low on-state resistance
- Fast switching times
- Low gate charge
- Avalanche rated
- Compliant to RoHS, REACH and Conflict Minerals
Applications
- Electronic trunk opener
- Electronic door opener
- Tailgate control systems
- Pump motor controller
- Fan motor controller
- Electric Seat Controller
Specifications
- 40 V drain-source voltage (VDSS)
- 50 A continuous drain current (ID)
- Typical 5.5 mΩ on-state resistance (RDSon)
- 1 µA drain-source leakage current (IDSS)
- ±20 V continuous gate-source-voltage (VGSS)
- 37.5 W power dissipation (Ptot)
- 200 A peak drain current (IDM)
- 50 A continuous source current (IS)
- 200 A peak source current (ISM)
- 4.2 K/W thermal resistance (RthC)
- -55°C to +175°C operating junction temperature range (Tj)
- PowerQFN 3x3 Package
ESDB1524GW-AQ - Reliable ESD Protection for LIN and CXPI Automotive Bus Systems
The Local Interconnect Network (LIN), also known as the LIN bus, is a serial fieldbus for networking sensors, actuators and human-machine interfaces in automotive applications. CXPI (Clock eXtension Peripheral Interface) was developed to overcome certain disadvantages of the widely used LIN bus, but largely shares the physical layer with it. Needless to say that such bus systems require ESD protection, since they are highly affected by human-induced discharges according to the standard IEC 61000-4-2 human body model (HBM).
The automotive standard ISO 16750-2 requires in addition during jump start an overvoltage capability of +24 V, and for reverse battery events an undervoltage of -15 V. ESD protection diodes must overcome both voltage ranges, and are ideally in asymmetric configuration. The ESDB1524GW-AQ was developed for such requirement, and offers a comfortable ESD capability of ± 30 kilovolts. Its high peak pulse power and low reverse leakage currents address the particular needs of LIN and CXPI buses.
Features
- High ESD capability
- Asymmetric configuration according to ISO 16750-2:
- +24 V for jump start
- -15 V for reverse battery
- Compliant to ROHS, REACH, Conflict Minerals
- AEC-Q101 qualified
Applications
- LIN and CXPI bus protection
- ESD protection
- Data line & I/O port protection
- Human-machine interfaces
- Automotive Gateway Protection
Specifications
- +24 V stand-off voltage in forward (VWM1)
- -15 V stand-off voltage in reverse (VWM2)
- ESD capability of ± 30 kV (VPP)
- Peak pulse power at 8/20 µs pulse 200 W (PPPM)
- Maximum reverse current 50 nA (ID)
Diotec’s GBI25J-LV Rectifier Bridge Delivers 20% Power Savings for 24/7 Industrial and Server Applications
The GBI25J-LV by Diotec Semiconductor is a rectifier bridge in GBI single inline case. It offers 10% lower forward voltage drop per single diode, compared to the standard version GBI25J. Since always two diodes are conducting per mains half-cycle, the total power savings at the input bridge are even 20%. These parts have been developed for power supplies running 24/7, e. g. used to power up internet server stations. Output current is 25 A when case is kept at 80°C. Forward surge current rating is 325/360 A at 10/8.3 ms half sine wave pulse, and repetitive peak reverse voltage 600 V. Applications include server stations, computer networks, base stations, industrial controls and drives, and many more.
Features
- Low Vf diodes
- Up to 20% of energy savings
- Single inline case
- 7.5 … 10 mm pitch
- Easy heatsink assembly
- High forward surge current
Applications
- Power supplies operating 24/7
- Server stations
- Computer networks
- Base stations
- Industrial controls and drives
Specifications
- Nominal 25 A output current at 80°C case temperature (IFAV)
- Peak reverse voltage 600 V (VRRM)
- Forward voltage < 0.92 V at 12.5 A / 25°C (VF)
- Reverse current < 5 µA at 1000 V / 25°C (IR)
- GBI single inline case with 10 mm respectively 2x 7.5 mm pitch
SI02C120SMA - Silicon Carbide Schottky Diode Optimized for High-Side SiC MOSFET Bootstrapping
The SI02C120SMA by Diotec Semiconductor is a 2 A / 1200 V Silicon Carbide Schottky Diode encapsulated in the compact DO-214AA (SMA) package. It features a high breakdown voltage of 1200 V combined with an extremely low reverse recovery charge and intrinsic junction capacitance hence improved its reliability in highly demanding application. Hence, this would pose SI02C120SMA as an optimum Bootstrap Diode in driving high-side (HS) configuration SiC-MOSFET.
Driving a HS SiC-MOSFET poises a significant challenge due to its floating Source Voltage node, VS, which reaches several hundred volts in a typical application. Hence, to effectively turn on the SiC-MOSFET, the gate voltage, Vg, must be biased sufficiently above the Vs. One of the most cost-effective methods to achieve this is through bootstrapping. However, conventional bootstrap circuits may face limitations especially in duty cycle and operating frequency, primarily due to the fast repetitive charging time of the bootstrap capacitor. These limitations could be substantially mitigated by our newly released SI02C120SMA. Its ability to withstand higher-intensity and repetitive peak forward currents could eliminate the need for a bootstrap resistor, thereby speeding up the charging and discharging process. Furthermore, its favourable smaller junction capacitance helps suppress any possible EMI-induced ringing and reduce the possibility of false Undervoltage Lockout (UVLO) triggering by the gate driver. The diode’s robust performance under demanding environment surpasses even that of the soft recovery ultra-fast silicon diode, making it a superior replacement in the selection of bootstrapping diode.
Features
- High reverse breakdown voltage
- Almost zero switching losses
- Low reverse leakage current
- High efficiency high frequency switching
- Compact SMD package
Applications
- Auxiliary Power Supply
- Solar inverters
- Telecom power supplies
- Power factor correction
Specifications
- 2 A average forward current at 160°C (IFAV)
- 1200 V repetitive reverse voltage (VRRM)
- Typical forward voltage 1.40 V V at 2 A and 25°C (VF)
- Typical reverse leakage 2 µA at 1200 V and 175°C (IR)
- Total capacitive charge 16 nC at 800 V, 2 A, 200 A/µs [QC)
- DO-214AC (SMA) case outline
Diotec Launches DIF170SIC049: Ultra-Low RDS(on) SiC MOSFET for High-Speed, High-Efficiency Power Systems
Diotec Semiconductor is introducing their newest Silicon Carbide (SiC) MOSFET, DIF170SIC049 which features devices with low RDS(on) values of 49 mΩ. It is encapsulated in the TO-247-4L consisting Kelvin-Source pin enabling faster switching speeds and lower power losses. This part covers a comprehensive portfolio for various applications: Industrial drives, power conversion systems, EV chargers and PV inverters.
As modern electronic systems continue to push the boundaries of performance, efficiency, and compactness, upgrading the voltage system of an application often necessitates refined adjustments to the circuitry design, whether in discrete components or integrated circuits. This is precisely where Diotec’s newly launched DIF170SIC049 comes into spotlight. Engineered for superior reliability, it ensures an extended safety margin specifically against sudden voltage overshoot caused parasitic passive components. Either deployed in four forming an H-bridge for charging a battery, or even as six intricate switches in a three-phase inverter, the DIF170SIC049 delivers reliable performance under both soft- and hard switching conditions, ensuring robust operation and long-term circuit stability. Its maximum RDS(on) of 49 mOhm also minimizes conduction and switching losses, maintaining overall system efficiency and enhanced thermal performance. By combining the inherent robustness of SiC technology with its optimized switching dynamics, Diotec empowers designers to confidently pioneering the next-generation innovation.
Features
- High reverse breakdown voltag
- Advanced Planar technology
- Low on-state resistance
- Fast switching time with low capacitance
- Low Gate charge
- Low total switching energy
- Engineering samples available
Applications
- Charging systems for electric vehicles (EV)
- Solar inverters
- Telecom power supplies
- Power Factor Correction (PFC)
- Switched-mode power supply (SMPS)
- DC/DC converters
- Industrial machinery
- Motor Drive
Specifications
- 1700 V drain-source voltage (VDSS)
- Maximum 49 mΩ on-state resistance (RDS(on))
- 100 µA drain-source leakage current (IDSS)
- From to -8 V to 22 V continuous gate-source-voltage (VGSS)
- Recommended turn-on Gate voltage VGS(on)of 18 V
- Recommended turn-off Gate voltage VGS(off)of -4 V
- 357 W power dissipation (Ptot)
- Up to 150 A peak drain current (IDM)
- 0.21 K/W maximum thermal resistance (RthC)
- -55°C to +175°C operating junction temperature range (Tj)
- Industrial TO-247 with 4 leads
Industrial and Domestic Controls
The heart of any industrial or domestic control device is either a microcontroller, a PLC (Programmable Logic Controller) or an IPC (Industrial PC). It handles the data processing, logic control, and interfacing. The latter includes digital inputs and outputs for status and PWM signals, switches or relays. Analog inputs measure variables such as temperature, brightness or frequency, while the outputs provide signal voltages or currents. Communication with other devices works via special interfaces such as Profibus, Profinet, EtherNet/IP, CANopen, Modbus or KNX. The power supply runs on typical input voltages of 24 VDC, 48 VDC or 110/230 VAC; sometimes, communication data are transferred via the power line itself.
Diotec provides dedicated semiconductor components acting between the microcomputer device and its surrounding. This Application Note introduces it.
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Reliable Railway Electronics or Time to Talk About Choosing the Right Semiconductors - by Diotec Semiconductor
Reliability, safety and operation under adverse and sometimes extreme conditions play a central role in train electronics. Railway systems operate in wide temperature ranges and are exposed to vibrations and shocks. The pantograph's up and down movement causes high-energy arcing, which leads to voltage spikes in the train's electrical system – a threat to any type of electronics. Voltage drops and the subsequent restoration of voltage are the triggers for strong vibrations due to the inductance of the 100-metre-long and longer carriage cabling. A failure of railway electronics leads to delays in the best case scenario and, in the worst case, can endanger human health and life. It is time to take a look at the influence and importance of selecting the right semiconductor components.
First of all, designers should consider safety margins that exceed the values commonly used in conventional industrial circuits. Rectifiers or MOSFETs operating in a 110 V DC system would normally be selected with a permissible reverse voltage of 200 V. For the voltage spikes mentioned above, the use of 400 V types or even higher values is not an exaggeration. It is advisable to use only avalanche-rated parts, as these parts are designed and tested to withstand a defined surge energy. Forward peak current and reverse peak pulse power are parameters that lead to immediate failure if their maximum ratings are exceeded. If the amount of energy is known, e.g. through measurements in the circuit and based on calculations, it is again advisable to select components that can withstand at least twice that amount.
The additional costs for these high-quality components are certainly money well spent, as they increase the reliability of passenger transport vehicles. The savings in negative follow-up costs associated with failures, fault analysis, redesign and repairs are strategically important.
Secondly, there is an area of application that requires the same high level of reliability and qualification, but which is often overlooked by railway electronics engineers. We are talking here about automotive environments and the appropriately qualified semiconductors. These components meet the strict AEC-Q101 standard and are specially designed to function reliably under adverse environmental conditions. This makes them particularly attractive for trains. They offer high reliability and a long service life, as they are subjected to intensive testing and ageing simulations. The components remain stable even at extreme temperatures and feature improved surge and short-circuit resistance. This reduces maintenance costs and ensures smooth operation of trains on the rail network – a desirable design goal. Despite higher acquisition costs, automotive components pay for themselves through lower failure rates, less maintenance and longer replacement cycles.
Thirdly, semiconductor manufacturers' expertise is available. Semiconductor manufacturers know which component is the perfect choice for your specific ecosystem and environmental conditions. Their FAE and QA engineers can tell you which qualification level is recommended for a particular application and inform you about failure rates and life expectancy. Manufacturers are fully aware of the built-in safety margins of their components, the parameter variations typical for each semiconductor, and their temperature drift.
Years of experience in special applications in specific environments can thus be integrated into customer products.
In summary, above-average safety margins, semiconductors qualified for the automotive sector and early consultation with the manufacturer's experts are the right way forward.
The result is reliable, robust, long-term available and, in any case, safety-relevant designs. This contributes significantly to optimising operational safety, maintenance intervals and total cost of ownership in the railway sector.
Diotec’s PW4512 - 45 A / 1200 V Standard Recovery Rectifier
The PW4512 from Diotec Semiconductor is a high-performance, standard-recovery rectifier diode designed for demanding power applications. With a repetitive reverse voltage of 1200 V and a maximum average forward current of 45 A, the PW4512 delivers reliable performance in industrial and high-power environments.
Assembled in an industry-standard TO-247-2L package, the PW4512 ensures excellent thermal performance and easy heat sink assembly. The PW4512 features a low forward voltage drop of less than 1.1 V at 45 A and 25°C, which contributes to improved system efficiency and reduced power losses. The PW4512 also supports a high surge current capability of up to 300 A (10 ms), ensuring robust performance under transient conditions.
As such, the PW4512 is ideal for applications such as polarity protection or OR-ing circuits in battery-powered systems (e.g. back-up supplies for data servers or telecom base stations, UPS or solar water pumps), input rectification in industrial power supplies, motor drives, and inverters.
Key Features
- High voltage capability (1200 V)
- High forward current rating (45 A)
- Low forward voltage drop (< 1.1 V at 45 A, 25°C)
- High surge current capability (300 A, 10 ms)
- High power dissipation
- Easy heat sink mounting (TO-247-2L)
- Industry-standard package outline
Applications
- Back-up supplies for data servers
- Telecom base stations
- Motor drives
- Polarity protection
- OR-ing circuits
- Inverters
- Battery chargers
- Uninterruptible Power Supplies (UPS)
Specifications
- Average Forward Current (IFAV): 45 A
- Repetitive Reverse Voltage (VRRM): 1200 V
- Forward Voltage (VF): < 1.1 V at 45 A, 25°C
- Surge Current (IFSM): 300 A (10 ms)
- Recovery Time: 1500 ns (standard recovery)
- Package: TO-247-2L
The PW4512 combines high voltage capability, strong surge robustness, and efficient thermal performance, making it a reliable solution for industrial power conversion and protection applications.
Diotec's GBI25J-LV: Low-VF Bridge Rectifier for Continuous-Duty Power Stages
In single-phase AC input stages, two rectifier diodes conduct during every mains half-cycle. Consequently, the forward voltage drop directly determines conduction loss, thermal loading and long-term reliability during continuous operation.
The Diotec GBI25J-LV is a 25 A, 600 V bridge rectifier optimized for low forward voltage under typical load conditions. At a forward current of 12.5 A, the forward voltage remains below 0.92 V per diode. With two diodes permanently in the current path, this reduction in V_F lowers total conduction losses by up to 20% compared with conventional bridge rectifiers — under nominal operating conditions, not only at peak load.
The device is rated for an average output current of 25 A at a case temperature of 80 °C, supporting high current density in compact power designs. Surge current capability reaches 325/360 A, providing comfortable margin against inrush events and transient overloads. Reverse leakage current is specified at below 5 µA, supporting efficiency and thermal stability across operating temperature ranges.
The GBI25J-LV is supplied in a GBI single-inline package with asymmetric pin pitch of 2x 7.5 mm and 10 mm. The package supports direct heatsink mounting, enabling efficient thermal coupling and predictable temperature control in high-power designs.
Typical applications include server and data center power supplies, telecommunications and base station equipment, network infrastructure and continuously operating industrial power systems, in which rectifier conduction losses accumulate with every mains cycle, directly affecting system efficiency and lifetime.
DI010N03PW-AQ N-Channel Power MOSFET by Diotec in a Compact QFN 2×2 Package
Diotec’s DI010N03PW-AQ N-channel power MOSFET supports high efficiency and robust operation in a tiny package, making it ideal for DC to DC converters, power management units, load switches, and other commercial, industrial, and automotive applications.
For more insights watch our new video or click here: diotec.com/DI010N03PW-AQ