最新动态
Diotec Launches DIF170SIC049: Ultra-Low RDS(on) SiC MOSFET for High-Speed, High-Efficiency Power Systems
Diotec Semiconductor is introducing their newest Silicon Carbide (SiC) MOSFET, DIF170SIC049 which features devices with low RDS(on) values of 49 mΩ. It is encapsulated in the TO-247-4L consisting Kelvin-Source pin enabling faster switching speeds and lower power losses. This part covers a comprehensive portfolio for various applications: Industrial drives, power conversion systems, EV chargers and PV inverters.
As modern electronic systems continue to push the boundaries of performance, efficiency, and compactness, upgrading the voltage system of an application often necessitates refined adjustments to the circuitry design, whether in discrete components or integrated circuits. This is precisely where Diotec’s newly launched DIF170SIC049 comes into spotlight. Engineered for superior reliability, it ensures an extended safety margin specifically against sudden voltage overshoot caused parasitic passive components. Either deployed in four forming an H-bridge for charging a battery, or even as six intricate switches in a three-phase inverter, the DIF170SIC049 delivers reliable performance under both soft- and hard switching conditions, ensuring robust operation and long-term circuit stability. Its maximum RDS(on) of 49 mOhm also minimizes conduction and switching losses, maintaining overall system efficiency and enhanced thermal performance. By combining the inherent robustness of SiC technology with its optimized switching dynamics, Diotec empowers designers to confidently pioneering the next-generation innovation.
Features
- High reverse breakdown voltag
- Advanced Planar technology
- Low on-state resistance
- Fast switching time with low capacitance
- Low Gate charge
- Low total switching energy
- Engineering samples available
Applications
- Charging systems for electric vehicles (EV)
- Solar inverters
- Telecom power supplies
- Power Factor Correction (PFC)
- Switched-mode power supply (SMPS)
- DC/DC converters
- Industrial machinery
- Motor Drive
Specifications
- 1700 V drain-source voltage (VDSS)
- Maximum 49 mΩ on-state resistance (RDS(on))
- 100 µA drain-source leakage current (IDSS)
- From to -8 V to 22 V continuous gate-source-voltage (VGSS)
- Recommended turn-on Gate voltage VGS(on)of 18 V
- Recommended turn-off Gate voltage VGS(off)of -4 V
- 357 W power dissipation (Ptot)
- Up to 150 A peak drain current (IDM)
- 0.21 K/W maximum thermal resistance (RthC)
- -55°C to +175°C operating junction temperature range (Tj)
- Industrial TO-247 with 4 leads