DIF170SIC049
SiC MOSFETs

Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIF170SIC049 1700V SiC MOSFET
SiC MOSFET, TO-247-4L, N, 67A, 1700V, 49mΩ, 175°C
Minimum order quantity 450
Stock 450
Customs Tariff Number 85412900
RoHS / REACH Yes

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Technical data

Article number DIF170SIC049
DIF170SIC049 Single
Type Wire-lead
Package TO-247-4L
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
Polarity pol N
Drain Current 25°C ID 67.000 A
Drain Current 100°C ID 47.000 A
Drain Source Voltage VDS 1700 V
On-Resistance 1 RDSon1 0.04900
@ ID 40.000 A
@ VGS 18 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 357.000 W
@ TLoc
Location
Peak Drain Current IDM 150.000 A
Threshold Voltage VGSth min 1.9 V
VGSth max 4.0 V
Rise Time tr 21 ns
Fall Time tf 19 ns
Total Switching Energy Etotal 1.80 mJ
ESD protection ESD protected No
On-Resistance 2 RDSon2
@ ID
@ VGS
Turn-On Delay Time tD(on)
Turn-Off Delay Time tD(off) 43 ns
Total Gate Charge (4.5V) Qg (4.5V)
Total Gate Charge (10V) Qg (10V) 179.0 nC
Gate-Drain Charge Qgd
Single pulse avalanche energy Eas
Input Capacitance Ciss 3046 pF
Output Capacitance Coss 107 pF
Reverse Transfer Capacitance Crss 12 pF
Reverse recovery charge Qrr 230 nC
Avalanche Avalanche No

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