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Results 11 - 20 of 1124 for Harbinger VARI VS12 12 (0.020 seconds)
On-board charger for electric vehicles (EV)
-AQ index.php > en > product > BYG23T-AQ DBI25-12A index.php > en > product > DBI25-12A DBI25-16A … BYG23T-AQ, Show details for article number DBI25-12A, Show details for article number DBI25-16A, Show … GBI25J GBI40W index.php > en > product > GBI40W GBU12M index.php > en > product > GBU12M GBU8J
SiC MOSFET im TO-247 mit 3 oder 4 Anschlüssen
, Press Releases: stay up to date! Latest News 12.09.2023 SiC MOSFET im TO-247 mit 3 oder 4 Anschlüssen … im TO-247-Gehäuse mit 3 oder 4 Anschlüssen. DIW120SIC023-AQ, DIW120SIC059-AQ, DIF120SIC053-AQ Die … Gate-Source-Spannung (VGSS)) und mehr: DIW120SIC023-AQ, DIW120SIC059-AQ, DIF120SIC053-AQ
SiC MOSFET im TO-247 mit 3 oder 4 Anschlüssen
, Press Releases: stay up to date! Latest News 12.09.2023 SiC MOSFET im TO-247 mit 3 oder 4 Anschlüssen … im TO-247-Gehäuse mit 3 oder 4 Anschlüssen. DIW120SIC023-AQ, DIW120SIC059-AQ, DIF120SIC053-AQ Die … Gate-Source-Spannung (VGSS)) und mehr: DIW120SIC023-AQ, DIW120SIC059-AQ, DIF120SIC053-AQ
SiC MOSFET Family
are low switching losses, high voltage levels (1200 V), maximum 53 mΩ to 23 mΩ on-state resistance ( … )) and more. Video bei YouTube anzeigen Products DIF120SIC022-AQ en > product > DIF120SIC022-AQ DIF120SIC053- … , , Show details for article number DIF120SIC022-AQ, Show details for article number
SiC MOSFET Familie
niedrige Schaltverluste, hohe Spannungspegel (1200 V), maximal 53 mΩ bis 23 mΩ Durchlasswiderstand … )) und mehr. Video bei YouTube anzeigen Products DIF120SIC022-AQ en > product > DIF120SIC022-AQ DIF120SIC053- … , , Show details for article number DIF120SIC022-AQ, Show details for article number
SiC MOSFET系列
,工业和商业领域的其他电源应用。 这些碳化硅MOSFET的规格是低开关损耗,高电压电平(1200 V),最大53 mΩ至23 mΩ导通电阻(RDSon),低栅极电荷(从-8 V到22 … (VGSS))等等。 Video bei YouTube anzeigen Products DIF120SIC022-AQ en > product > DIF120SIC022-AQ DIF120SIC053- … , , Show details for article number DIF120SIC022-AQ, Show details for article number
SiC MOSFET Family
are low switching losses, high voltage levels (1200 V), maximum 53 mΩ to 23 mΩ on-state resistance ( … )) and more. Video bei YouTube anzeigen Products DIF120SIC022-AQ index.php > en > product > DIF120SIC022-AQ … , , Show details for article number DIF120SIC022-AQ, Show details for article number
SiC MOSFET Familie
niedrige Schaltverluste, hohe Spannungspegel (1200 V), maximal 53 mΩ bis 23 mΩ Durchlasswiderstand … )) und mehr. Video bei YouTube anzeigen Products DIF120SIC022-AQ index.php > en > product > DIF120SIC022-AQ … , , Show details for article number DIF120SIC022-AQ, Show details for article number
SiC MOSFET系列
,工业和商业领域的其他电源应用。 这些碳化硅MOSFET的规格是低开关损耗,高电压电平(1200 V),最大53 mΩ至23 mΩ导通电阻(RDSon),低栅极电荷(从-8 V到22 … (VGSS))等等。 Video bei YouTube anzeigen Products DIF120SIC022-AQ index.php > en > product > DIF120SIC022-AQ … , , Show details for article number DIF120SIC022-AQ, Show details for article number DIF120SIC053
Silicon Carbide Schottky Roadmap
diodes feature a high reverse voltage (650 V ... 1200 V) combined with an extremely low "reverse … diodes feature a high reverse voltage (650 V ... 1200 V) combined with an extremely low "reverse … . Flyer_sic-diodes.pdf (71.2 KiB) Products SI20C120D2 en > product > SI20C120D2 SICW20C120 en > …