MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection

Article number	Type	Package	Qualification	Config	Life Cycle	ESD protected ESD protection	pol Polarity	VDS [V] Drain Source Voltage	ID [A] Drain Current 25°C	RDSon1 [Ω] On-Resistance 1	@ ID [A] On-Resistance 1	@ VGS [V] On-Resistance 1	ID [A] Drain Current 100°C	RDSon2 [Ω] On-Resistance 2	@ ID [A] On-Resistance 2	@ VGS [V] On-Resistance 2	Tjmax [°C] Junction Temperature	Ptot [W] Power Dissipation	@ TLoc [°C] Power Dissipation	Location Power Dissipation	Avalanche Avalanche	IDM [A] Peak Drain Current	VGSth min [V] Threshold Voltage	VGSth max [V] Threshold Voltage	tD(on) [ns] Turn-On Delay Time	tr [ns] Rise Time	tD(off) [ns] Turn-Off Delay Time	tf [ns] Fall Time	Qg (10V) [nC] Total Gate Charge (10V)	Qg (4.5V) [nC] Total Gate Charge (4.5V)	Qgd [nC] Gate-Drain Charge	Eas [mJ] Single pulse avalanche energy	Ciss [pF] Input Capacitance	Coss [pF] Output Capacitance	Crss [pF] Reverse Transfer Capacitance	Qrr [nC] Reverse recovery charge

Last Update: 2025-10-02 18:10:17 UTC+2