MMFTN6190KDW
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTN6190KDW
MOSFET, SOT-363, N+N, 30V, 1A, 0.28Ω, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMFTN6190KDW
MMFTN6190KDW Dual Protected
Type SMD
Package SOT-363
Qualification Industrial Grade
Config Dual Protected
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N+N
Drain source voltage VDS 30 V
Drain current 25°C ID 1 A
On-resistance 1 RDSon1 0.28 Ω
@ ID 1.3 A
@ VGS 10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.45 Ω
@ ID 0.29 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 0.4 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM 9.6 A
@ tp 10 µs
Threshold voltage VGSth min 1 V
VGSth max 2.8 V
Turn-on delay time tD(on) 5 ns
Rise time tr 9 ns
Turn-off delay time tD(off) 30 ns
Fall time tf 16 ns
Total gate charge (10V) Qg (10V) 2 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 0 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 87 pF
Output capacitance Coss 17 pF
Reverse transfer capacitance Crss 12 pF
Reverse recovery charge Qrr null nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking Z69N
Thermal resistance junction RTH 395 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 10 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 30 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS 2000 V
Forward transconductance gfs null mA/V
Intrinsic gate resistance RGi 69.8 Ω

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