MMFTN123-Q
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
Related products
News and Updates
Request sample

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTN123-Q
MOSFET, SOT-23, N, 100V, 0.17A, 6Ω, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Downloads & Links

Distributor Availability

Technical data

Article number MMFTN123-Q
MMFTN123-Q Single
Type SMD
Package SOT-23
Qualification AEC-Q compliant
Config Single
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 0.170 A
On-resistance 1 RDSon1 6.0 Ω
@ ID 0.17 A
@ VGS 10 V
Drain current 100°C ID
On-resistance 2 RDSon2 10.0000 Ω
@ ID 0.170 A
@ VGS 4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 0.360 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 0.680 A
Threshold voltage VGSth min 0.8 V
VGSth max 2.0 V
Turn-on delay time tD(on) 3 ns
Rise time tr 18 ns
Turn-off delay time tD(off) 31 ns
Fall time tf 15 ns
Total gate charge (10V) Qg (10V)
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd
Single pulse avalanche energy Eas
Input capacitance Ciss 73 pF
Output capacitance Coss 7 pF
Reverse transfer capacitance Crss 3 pF
Reverse recovery charge Qrr

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample