DIW170SIC750
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIW170SIC750 1700 V SiC MOSFET
SiC MOSFET, TO-247-3L, N, 7.5A, 1700V, 850mΩ, 175°C
Minimum order quantity 450
Stock 20
Customs Tariff Number 85412900
RoHS / REACH Yes

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Technical data

Article number DIW170SIC750
DIW170SIC750 Single
Type Wire-lead
Package TO-247-3L
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
Polarity pol N
Drain Current 25°C ID 7.500 A
Drain Current 100°C ID 5.300 A
Drain Source Voltage VDS 1700 V
On-Resistance 1 RDSon1 0.8500 Ω
@ ID 2.000 A
@ VGS 20 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 84.000 W
@ TLoc 25 °C
Location Junction
Peak Drain Current IDM 19.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Rise Time tr 10 ns
Fall Time tf 23 ns
Total Switching Energy Etotal 0.05 mJ
ESD protection ESD protected No
On-Resistance 2 RDSon2
@ ID
@ VGS
Turn-On Delay Time tD(on) 7 ns
Turn-Off Delay Time tD(off) 16 ns
Total Gate Charge (4.5V) Qg (4.5V)
Total Gate Charge (10V) Qg (10V) 23.8 nC
Gate-Drain Charge Qgd 7 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 285 pF
Output Capacitance Coss 14 pF
Reverse Transfer Capacitance Crss 3 pF
Reverse recovery charge Qrr 86 nC
Avalanche Avalanche No

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