DIW170SIC070
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIW170SIC070 1700 V SiC MOSFET
SiC MOSFET, TO-247-3L, N, 70A, 1700V, 60mΩ, 175°C
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
RoHS / REACH Yes

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Technical data

Article number DIW170SIC070
DIW170SIC070 Single
Type Wire-lead
Package TO-247-3L
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
Polarity pol N
Drain Current 25°C ID 70.000 A
Drain Current 100°C ID 45.000 A
Drain Source Voltage VDS 1700 V
On-Resistance 1 RDSon1 0.0600 Ω
@ ID 40.000 A
@ VGS 20 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 455.000 W
@ TLoc 25 °C
Location
Peak Drain Current IDM 140.000 A
Threshold Voltage VGSth min 2.2 V
VGSth max 4.2 V
Rise Time tr 19 ns
Fall Time tf 14 ns
Total Switching Energy Etotal 1.95 mJ
ESD protection ESD protected No
On-Resistance 2 RDSon2
@ ID
@ VGS
Turn-On Delay Time tD(on) 37 ns
Turn-Off Delay Time tD(off) 30 ns
Total Gate Charge (4.5V) Qg (4.5V)
Total Gate Charge (10V) Qg (10V) 131.0 nC
Gate-Drain Charge Qgd 15 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 2951 pF
Output Capacitance Coss 80 pF
Reverse Transfer Capacitance Crss 6 pF
Reverse recovery charge Qrr 201 nC
Avalanche Avalanche No

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