DIW120SIC192
SiC MOSFETs

Downloads & Links
Technical data
News and Updates
Request sample

Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIW120SIC192 1200V SiC MOSFET
SiC MOSFET, TO-247-3L, N, 19A, 1200V, 192mΩ, 150°C
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Downloads & Links

Distributor Availability

Technical data

Article number DIW120SIC192
DIW120SIC192 Single
Type Wire-lead
Package TO-247-3L
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL n/a
 
Polarity pol N
Drain current 25°C ID 19.000 A
Drain current 100°C ID 12.500 A
Drain source voltage VDS 1200 V
On-resistance 1 RDSon1 0.1920 Ω
@ ID 10.000 A
@ VGS 20 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 127.000 W
@ TLoc
Location
Peak drain current IDM 40.000 A
Threshold voltage VGSth min 2.0 V
VGSth max 3.5 V
Rise time tr 0 ns
Fall time tf 0 ns
Total switching energy Etotal 0.14 mJ
ESD protection ESD protected No
On-resistance 2 RDSon2
@ ID
@ VGS
Turn-on delay time tD(on)
Turn-off delay time tD(off)
Total gate charge (4.5V) Qg (4.5V)
Total gate charge (10V) Qg (10V)
Gate-drain charge Qgd
Single pulse avalanche energy Eas
Input capacitance Ciss 950 pF
Output capacitance Coss 35 pF
Reverse transfer capacitance Crss 9 pF
Reverse recovery charge Qrr 44 nC
Avalanche No

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample