DIW120SIC022-AQ
SiC MOSFETs

Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIW120SIC022-AQ 1200V SiC MOSFET
SiC MOSFET, TO-247-3L, N, 120A, 1200V, 22.3mΩ, 175°C, AEC-Q101
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Distributor Availability

Technical data

Article number DIW120SIC022-AQ
DIW120SIC022-AQ Single
Type Wire-lead
Package TO-247-3L
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
Drain source voltage VDS 1200 V
Drain current 25°C ID 120.000 A
On-resistance 1 RDSon1 0.0223
@ ID 75 A
@ VGS 18 V
On-resistance 2 RDSon2 0.0280
@ ID 75.000 A
@ VGS 18 V
Polarity pol N
ESD protection ESD protected No
Gate source voltage DC VGSS
Gate source voltage ESD VGSS
Drain current 100°C ID 85.000 A
Peak drain current IDM 250.000 A
@ tp
Junction temperature Tjmin
Tjmax 175 °C
Power dissipation Ptot 580.000 W
@ TLoc 25 °C
Location
Threshold voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-on delay time tD(on) 150 ns
Rise time tr 38 ns
Turn-off delay time tD(off) 108 ns
Fall time tf 35 ns
Total switching energy Etotal
Total gate charge (4.5V) Qg (4.5V)
Total gate charge (10V) Qg (10V)
Gate-drain charge Qgd 48 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 4817 pF
Output capacitance Coss 207 pF
Reverse transfer capacitance Crss 45 pF
Reverse recovery charge Qrr 630 nC
Avalanche No
Net weight mnet
Marking Marking
Case flammability UL94-V0 No
Thermal resistance junction RTH
Location
UL recognized UL-Recognition
Thermal resistance junction (b) RTH
Location
Storage temperature Tsmin
Tsmax
Solder & Assembly Solder & Assembly

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