DIW018N65
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIW018N65
MOSFET, TO-247-3L, N, 650V, 18A, 0.18Ω, 150°C
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DIW018N65
DIW018N65 Single
Type Wire-lead
Package TO-247-3L
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 650 V
Drain Current 25°C ID 18.000 A
On-Resistance 1 RDSon1 0.1800 Ω
@ ID 10 A
@ VGS 10 V
Drain Current 100°C ID 11.000 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 156.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 60.000 A
Threshold Voltage VGSth min 2.5 V
VGSth max 4.5 V
Turn-On Delay Time tD(on) 24 ns
Rise Time tr 8 ns
Turn-Off Delay Time tD(off) 28 ns
Fall Time tf 34 ns
Total Gate Charge (10V) Qg (10V) 38.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 14 nC
Single pulse avalanche energy Eas 480.0 mJ
Input Capacitance Ciss 1680 pF
Output Capacitance Coss 40 pF
Reverse Transfer Capacitance Crss 6 pF
Reverse recovery charge Qrr 5 nC

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