DIT100N10
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIT100N10
MOSFET, TO-220AB, N, 100V, 100A, 9.9mΩ, 175°C
Minimum order quantity 1.000
Stock 530
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DIT100N10
DIT100N10 Single
Type Wire-lead
Package TO-220AB
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 100.000 A
On-Resistance 1 RDSon1 0.0099 Ω
@ ID 40 A
@ VGS 10 V
Drain Current 100°C ID 55.000 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 200.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 380.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 15 ns
Rise Time tr 50 ns
Turn-Off Delay Time tD(off) 40 ns
Fall Time tf 55 ns
Total Gate Charge (10V) Qg (10V) 85.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 28 nC
Single pulse avalanche energy Eas 800.0 mJ
Input Capacitance Ciss 4800 pF
Output Capacitance Coss 340 pF
Reverse Transfer Capacitance Crss 150 pF
Reverse recovery charge Qrr 53 nC

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