DIJ4A5N65
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIJ4A5N65
MOSFET, ITO-220AB, N, 650V, 4.5A, 1.3Ω, 150°C
Minimum order quantity 1.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DIJ4A5N65
DIJ4A5N65 Single
Type Wire-lead
Package ITO-220AB
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 650 V
Drain Current 25°C ID 7.000 A
On-Resistance 1 RDSon1 1.3000 Ω
@ ID 3.500 A
@ VGS 10 V
Drain Current 100°C ID 2.700 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 46.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 28.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 12 ns
Rise Time tr 20 ns
Turn-Off Delay Time tD(off) 74 ns
Fall Time tf 33 ns
Total Gate Charge (10V) Qg (10V) 22.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 6 nC
Single pulse avalanche energy Eas 281.0 mJ
Input Capacitance Ciss 1080 pF
Output Capacitance Coss 90 pF
Reverse Transfer Capacitance Crss 3 pF
Reverse recovery charge Qrr 3 nC

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