DIJ006N90
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIJ006N90
MOSFET, ITO-220AB, N, 900V, 6A, mΩ, 175°C
Minimum order quantity 1.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DIJ006N90
DIJ006N90 Single
Type Wire-lead
Package ITO-220AB
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 900 V
Drain Current 25°C ID 6.000 A
On-Resistance 1 RDSon1 2.1000 Ω
@ ID 2.000 A
@ VGS 10 V
Drain Current 100°C ID 4.000 A
On-Resistance 2 RDSon2 0.0000 Ω
@ ID 0.000 A
@ VGS 0 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 37.500 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM 16.000 A
Threshold Voltage VGSth min 2.5 V
VGSth max 4.5 V
Turn-On Delay Time tD(on)
Rise Time tr
Turn-Off Delay Time tD(off)
Fall Time tf
Total Gate Charge (10V) Qg (10V)
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 20 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 0 pF
Output Capacitance Coss 0 pF
Reverse Transfer Capacitance Crss 0 pF
Reverse recovery charge Qrr

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