DIF120SIC022
SiC MOSFETs

Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIF120SIC022 1200V SiC MOSFET
SiC MOSFET, TO-247-4L, N, 120A, 1200V, 22.3mΩ, 175°C
Minimum order quantity 450
Stock 200
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DIF120SIC022
DIF120SIC022 Single
Type Wire-lead
Package TO-247-4L
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
Polarity pol N
Drain Current 25°C ID 120.000 A
Drain Current 100°C ID 85.000 A
Drain Source Voltage VDS 1200 V
On-Resistance 1 RDSon1 0.0223
@ ID 75 A
@ VGS 18 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 340.000 W
@ TLoc
Location
Peak Drain Current IDM 250.000 A
Threshold Voltage VGSth min
VGSth max 4.0 V
Rise Time tr
Fall Time tf
Total Switching Energy Etotal 3.70 mJ
ESD protection ESD protected No
On-Resistance 2 RDSon2
@ ID
@ VGS
Turn-On Delay Time tD(on)
Turn-Off Delay Time tD(off)
Total Gate Charge (4.5V) Qg (4.5V)
Total Gate Charge (10V) Qg (10V)
Gate-Drain Charge Qgd
Single pulse avalanche energy Eas
Input Capacitance Ciss
Output Capacitance Coss
Reverse Transfer Capacitance Crss
Reverse recovery charge Qrr
Avalanche Avalanche No

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