DIF120SIC017
SiC MOSFETs

Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIF120SIC017 1200V SiC MOSFET
SiC MOSFET, TO-247-4L, N, 90A, 1200V, 17mΩ, 175°C
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
RoHS / REACH Yes

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Technical data

Article number DIF120SIC017
DIF120SIC017 Single
Type Wire-lead
Package TO-247-4L
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
 
Polarity pol N
Drain Current 25°C ID 90.000 A
Drain Current 100°C ID 63.000 A
Drain Source Voltage VDS 1200 V
On-Resistance 1 RDSon1 0.01700
@ ID 75 A
@ VGS 18 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 250.000 W
@ TLoc 25 °C
Location
Peak Drain Current IDM 198.000 A
Threshold Voltage VGSth min 1.8 V
VGSth max 3.6 V
Rise Time tr 26 ns
Fall Time tf 30 ns
Total Switching Energy Etotal 2.50 mJ
ESD protection ESD protected No
On-Resistance 2 RDSon2
@ ID
@ VGS
Turn-On Delay Time tD(on)
Turn-Off Delay Time tD(off) 128 ns
Total Gate Charge (4.5V) Qg (4.5V)
Total Gate Charge (10V) Qg (10V)
Gate-Drain Charge Qgd 71 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 6229 pF
Output Capacitance Coss 224 pF
Reverse Transfer Capacitance Crss 17 pF
Reverse recovery charge Qrr 2180.0 nC
Avalanche Avalanche No

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