DID3A2N65
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DID3A2N65
MOSFET, IPAK, N, 650V, 3.2A, 2.6Ω, 150°C
Minimum order quantity 6.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DID3A2N65
DID3A2N65 Single
Type SMD
Package TO-251/I-PAK
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 650 V
Drain Current 25°C ID 3.200 A
On-Resistance 1 RDSon1 2.6000 Ω
@ ID 2 A
@ VGS 10 V
Drain Current 100°C ID 2.000 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 54.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 16.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 45 ns
Rise Time tr 100 ns
Turn-Off Delay Time tD(off) 200 ns
Fall Time tf 130 ns
Total Gate Charge (10V) Qg (10V) 25.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 20 nC
Single pulse avalanche energy Eas 180.0 mJ
Input Capacitance Ciss 581 pF
Output Capacitance Coss 63 pF
Reverse Transfer Capacitance Crss 11 pF
Reverse recovery charge Qrr 370 nC

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