DI7A5N65D2K-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI7A5N65D2K-AQ Gate Protected
MOSFET, D2PAK, N, 650V, 7.5A, 0.43Ω, 150°C, AEC-Q101
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI7A5N65D2K-AQ
DI7A5N65D2K-AQ Single Protected
Type SMD
Package TO-263AB/D2PAK
Qualification AEC-Q101
Config Single Protected
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected Yes
Polarity pol N
Drain Source Voltage VDS 650 V
Drain Current 25°C ID 7.500 A
On-Resistance 1 RDSon1 0.4300 Ω
@ ID 4 A
@ VGS 10 V
Drain Current 100°C ID 4.700 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 62.500 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 25.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 43 ns
Rise Time tr 13 ns
Turn-Off Delay Time tD(off) 43 ns
Fall Time tf 50 ns
Total Gate Charge (10V) Qg (10V) 18.4 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 7 nC
Single pulse avalanche energy Eas 174.0 mJ
Input Capacitance Ciss 722 pF
Output Capacitance Coss 24 pF
Reverse Transfer Capacitance Crss 6 pF
Reverse recovery charge Qrr 2 nC

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