DI4A7P06SQ2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI4A7P06SQ2
MOSFET, SO-8, P+P, -60V, -4.7A, 75mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI4A7P06SQ2
DI4A7P06SQ2 Dual
Type SMD
Package SO-8
Qualification Industrial Grade
Config Dual
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol P+P
Drain Source Voltage VDS -60 V
Drain Current 25°C ID -4.700 A
On-Resistance 1 RDSon1 0.0750 Ω
@ ID -5 A
@ VGS -10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 0.0000 Ω
@ ID 0.000 A
@ VGS 0 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 3.000 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM -30.000 A
Threshold Voltage VGSth min -1.3 V
VGSth max -2.3 V
Turn-On Delay Time tD(on) 0 ns
Rise Time tr 6 ns
Turn-Off Delay Time tD(off) 0 ns
Fall Time tf 13 ns
Total Gate Charge (10V) Qg (10V)
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 0 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 0 pF
Output Capacitance Coss 0 pF
Reverse Transfer Capacitance Crss 0 pF
Reverse recovery charge Qrr

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