DI2A8N03PWK2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI2A8N03PWK2
MOSFET, PowerQFN 2x2, N+N, 30V, 2.8A, 72mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI2A8N03PWK2
DI2A8N03PWK2 Dual Protected
Type SMD
Package PowerQFN 2x2-Dual
Qualification Industrial Grade
Config Dual Protected
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
ESD protection ESD protected Yes
Polarity pol N+N
Drain source voltage VDS 30 V
Drain current 25°C ID 2.800 A
On-resistance 1 RDSon1 0.0720 Ω
@ ID 2 A
@ VGS 5 V
Drain current 100°C ID
On-resistance 2 RDSon2 0.1020 Ω
@ ID 1.000 A
@ VGS 2.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 1.000 W
@ TLoc
Location
Avalanche No
Peak drain current IDM 12.000 A
Threshold voltage VGSth min 0.4 V
VGSth max 1.2 V
Turn-on delay time tD(on) 1138 ns
Rise time tr 68 ns
Turn-off delay time tD(off) 892 ns
Fall time tf 99 ns
Total gate charge (10V) Qg (10V)
Total gate charge (4.5V) Qg (4.5V) 6.8 nC
Gate-drain charge Qgd 6 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 387 pF
Output capacitance Coss 37 pF
Reverse transfer capacitance Crss 10 pF
Reverse recovery charge Qrr 3 nC

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