DI2A7N70D1K-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI2A7N70D1K-Q Gate Protected
MOSFET, DPAK, N, 700V, 2.7A, 1.6Ω, 150°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI2A7N70D1K-Q
DI2A7N70D1K-Q Single Protected
Type SMD
Package TO-252AA/D-PAK
Qualification AEC-Q compliant
Config Single Protected
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected Yes
Polarity pol N
Drain Source Voltage VDS 700 V
Drain Current 25°C ID 2.700 A
On-Resistance 1 RDSon1 1.6000 Ω
@ ID 1 A
@ VGS 10 V
Drain Current 100°C ID 1.700 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 34.400 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 6.000 A
Threshold Voltage VGSth min 2.5 V
VGSth max 3.5 V
Turn-On Delay Time tD(on) 9 ns
Rise Time tr 11 ns
Turn-Off Delay Time tD(off) 19 ns
Fall Time tf 86 ns
Total Gate Charge (10V) Qg (10V) 5.8 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 2 nC
Single pulse avalanche energy Eas 19.3 mJ
Input Capacitance Ciss 209 pF
Output Capacitance Coss 12 pF
Reverse Transfer Capacitance Crss 5 pF
Reverse recovery charge Qrr 498 nC

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