DI2A2N100D1K-AQ
MOSFETs (Field Effect Transistors)
Product information
| Product family | MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection |
|---|---|
| Article description |
DI2A2N100D1K-AQ
Gate Protected
MOSFET, DPAK, N, 1000V, 2.2A, 6.8Ω, 150°C, AEC-Q101 |
| Minimum order quantity | 2.500 |
| Stock | 0 |
| Customs Tariff Number | 85412900 |
| RoHS / REACH | Yes |
Downloads & Links
Distributor Availability
Technical data
| Article number | DI2A2N100D1K-AQ | |
|---|---|---|
|
||
| Type | SMD | |
| Package | TO-252AA/D-PAK | |
| Qualification | AEC-Q101 | |
| Config | Single Protected | |
| Life Cycle | engineering sample | |
| ESD sensitive | No | |
| ESD protection | ESD protected | Yes |
| Polarity | pol | N |
| Drain Source Voltage | VDS | 1000 V |
| Drain Current 25°C | ID | 2.200 A |
| On-Resistance 1 | RDSon1 | 6.8000 Ω |
| @ ID | 1.500 A | |
| @ VGS | 10 V | |
| Drain Current 100°C | ID | |
| On-Resistance 2 | RDSon2 | |
| @ ID | ||
| @ VGS | ||
| Junction Temperature | Tjmax | 150 °C |
| Power Dissipation | Ptot | 29.700 W |
| @ TLoc | ||
| Location | ||
| Avalanche | Avalanche | No |
| Peak Drain Current | IDM | 8.000 A |
| Threshold Voltage | VGSth min | |
| VGSth max | 4.0 V | |
| Turn-On Delay Time | tD(on) | |
| Rise Time | tr | |
| Turn-Off Delay Time | tD(off) | |
| Fall Time | tf | |
| Total Gate Charge (10V) | Qg (10V) | |
| Total Gate Charge (4.5V) | Qg (4.5V) | |
| Gate-Drain Charge | Qgd | |
| Single pulse avalanche energy | Eas | |
| Input Capacitance | Ciss | |
| Output Capacitance | Coss | |
| Reverse Transfer Capacitance | Crss | |
| Reverse recovery charge | Qrr | |
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Application Reference Diagrams
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