DI200N10D2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI200N10D2
MOSFET, D2PAK, N, 100V, 200A, 2.3mΩ, 175°C
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI200N10D2
DI200N10D2 Single
Type SMD
Package TO-263AB/D2PAK
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 200.000 A
On-Resistance 1 RDSon1 0.0023 Ω
@ ID 120 A
@ VGS 10 V
Drain Current 100°C ID 185.000 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 340.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 950.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 38 ns
Rise Time tr 28 ns
Turn-Off Delay Time tD(off) 80 ns
Fall Time tf 35 ns
Total Gate Charge (10V) Qg (10V) 262.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 62 nC
Single pulse avalanche energy Eas 451.0 mJ
Input Capacitance Ciss 16800 pF
Output Capacitance Coss 1350 pF
Reverse Transfer Capacitance Crss 80 pF
Reverse recovery charge Qrr 290 nC

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