DI200N04PQ-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI200N04PQ-Q
MOSFET, PowerQFN 5x6, N, 40V, 200A, 1.3mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI200N04PQ-Q
DI200N04PQ-Q Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q compliant
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 200.000 A
On-Resistance 1 RDSon1 0.0013 Ω
@ ID 100 A
@ VGS 10 V
Drain Current 100°C ID 165.000 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 180.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 800.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 14 ns
Rise Time tr 8 ns
Turn-Off Delay Time tD(off) 57 ns
Fall Time tf 10 ns
Total Gate Charge (10V) Qg (10V) 92.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 18 nC
Single pulse avalanche energy Eas 1800.0 mJ
Input Capacitance Ciss 5768 pF
Output Capacitance Coss 2315 pF
Reverse Transfer Capacitance Crss 69 pF
Reverse recovery charge Qrr 120 nC

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