DI170SIC850D7
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DI170SIC850D7 1700V SiC MOSFET
SiC MOSFET, TO-263-7L, N, 7A, 1700V, 850mΩ, 150°C
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
RoHS / REACH Yes

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Technical data

Article number DI170SIC850D7
DI170SIC850D7 Single
Type SMD
Package TO-263-7L
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
Polarity pol N
Drain Current 25°C ID 7.000 A
Drain Current 100°C ID 4.500 A
Drain Source Voltage VDS 1700 V
On-Resistance 1 RDSon1 0.8500 Ω
@ ID 2.000 A
@ VGS 20 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 62.000 W
@ TLoc 25 °C
Location
Peak Drain Current IDM 9.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Rise Time tr 23 ns
Fall Time tf 14 ns
Total Switching Energy Etotal
ESD protection ESD protected No
On-Resistance 2 RDSon2
@ ID
@ VGS 2 V
Turn-On Delay Time tD(on) 14 ns
Turn-Off Delay Time tD(off) 38 ns
Total Gate Charge (4.5V) Qg (4.5V)
Total Gate Charge (10V) Qg (10V) 0.0 nC
Gate-Drain Charge Qgd
Single pulse avalanche energy Eas
Input Capacitance Ciss 198 pF
Output Capacitance Coss 13 pF
Reverse Transfer Capacitance Crss 2 pF
Reverse recovery charge Qrr 15 nC
Avalanche Avalanche No

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