DI120SIC026D7
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DI120SIC026D7 1200V SiC MOSFET
SiC MOSFET, TO-263-7L, N, 117A, 1200V, 26mΩ, 175°C
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
RoHS / REACH Yes

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Technical data

Article number DI120SIC026D7
DI120SIC026D7 Single
Type Wire-lead
Package TO-263-7L
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
 
Polarity pol N
Drain Current 25°C ID 117.000 A
Drain Current 100°C ID 83.000 A
Drain Source Voltage VDS 1200 V
On-Resistance 1 RDSon1 0.0260 Ω
@ ID 50.000 A
@ VGS 18 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 535.000 W
@ TLoc 25 °C
Location
Peak Drain Current IDM 297.000 A
Threshold Voltage VGSth min 1.9 V
VGSth max 4.0 V
Rise Time tr 32 ns
Fall Time tf 14 ns
Total Switching Energy Etotal
ESD protection ESD protected No
On-Resistance 2 RDSon2
@ ID
@ VGS
Turn-On Delay Time tD(on) 17 ns
Turn-Off Delay Time tD(off) 45 ns
Total Gate Charge (4.5V) Qg (4.5V)
Total Gate Charge (10V) Qg (10V) 64.0 nC
Gate-Drain Charge Qgd 182 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 5990 pF
Output Capacitance Coss 220 pF
Reverse Transfer Capacitance Crss 19 pF
Reverse recovery charge Qrr 639 nC
Avalanche Avalanche No

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