DI110N06D2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI110N06D2
MOSFET, D2PAK, N, 60V, 110A, 3.2mΩ, 150°C
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI110N06D2
DI110N06D2 Single
Type SMD
Package TO-263AB/D2PAK
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 60 V
Drain Current 25°C ID 110.000 A
On-Resistance 1 RDSon1 0.0032 Ω
@ ID 100 A
@ VGS 10 V
Drain Current 100°C ID 70.000 A
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 62.500 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 480.000 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 39 ns
Rise Time tr 69 ns
Turn-Off Delay Time tD(off) 27 ns
Fall Time tf 9 ns
Total Gate Charge (10V) Qg (10V) 75.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 22 nC
Single pulse avalanche energy Eas 100.3 mJ
Input Capacitance Ciss 4597 pF
Output Capacitance Coss 2133 pF
Reverse Transfer Capacitance Crss 110 pF
Reverse recovery charge Qrr 40 nC

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