DI110N04PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI110N04PQ
MOSFET, PowerQFN 5x6, N, 40V, 100A, 2.5mΩ, 175°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI110N04PQ
DI110N04PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 40 V
Drain current 25°C ID 100.000 A
On-resistance 1 RDSon1 0.0025 Ω
@ ID 23 A
@ VGS 10 V
Drain current 100°C ID 70.000 A
On-resistance 2 RDSon2 0.0038 Ω
@ ID 18.000 A
@ VGS 4.5 V
Junction temperature Tjmin
Tjmax 175 °C
Power dissipation Ptot 55.500 W
@ TLoc
Location
Avalanche Yes
Peak drain current IDM 450.000 A
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 19 ns
Rise time tr 42 ns
Turn-off delay time tD(off) 17 ns
Fall time tf 7 ns
Total gate charge (10V) Qg (10V) 48.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 7 nC
Single pulse avalanche energy Eas 123.5 mJ
Input capacitance Ciss 2980 pF
Output capacitance Coss 550 pF
Reverse transfer capacitance Crss 35 pF
Reverse recovery charge Qrr 18 nC

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