DI101N10PQ-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI101N10PQ-Q
MOSFET, PowerQFN 5x6, N, 100V, 100A
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI101N10PQ-Q
DI101N10PQ-Q Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q compliant
Config Single
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 100.000 A
On-Resistance 1 RDSon1 0.0000 Ω
@ ID 0.000 A
@ VGS 0 V
Drain Current 100°C ID 75.000 A
On-Resistance 2 RDSon2 0.0080 Ω
@ ID 30.000 A
@ VGS 10 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 130.000 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM 240.000 A
Threshold Voltage VGSth min
VGSth max 2.5 V
Turn-On Delay Time tD(on)
Rise Time tr
Turn-Off Delay Time tD(off)
Fall Time tf
Total Gate Charge (10V) Qg (10V)
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd
Single pulse avalanche energy Eas
Input Capacitance Ciss
Output Capacitance Coss
Reverse Transfer Capacitance Crss
Reverse recovery charge Qrr

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