DI100N04D1-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI100N04D1-AQ
MOSFET, DPAK, N, 40V, 100A, 4mΩ, 175°C, AEC-Q101
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI100N04D1-AQ
DI100N04D1-AQ Single
Type SMD
Package TO-252AA/D-PAK
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 100.000 A
On-Resistance 1 RDSon1 0.0040 Ω
@ ID 30 A
@ VGS 10 V
Drain Current 100°C ID 73.000 A
On-Resistance 2 RDSon2 0.0050 Ω
@ ID 20.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 83.300 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 450.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 40 ns
Rise Time tr 63 ns
Turn-Off Delay Time tD(off) 37 ns
Fall Time tf 9 ns
Total Gate Charge (10V) Qg (10V) 143.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 28 nC
Single pulse avalanche energy Eas 164.0 mJ
Input Capacitance Ciss 7000 pF
Output Capacitance Coss 549 pF
Reverse Transfer Capacitance Crss 404 pF
Reverse recovery charge Qrr 13 nC

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