DI0A4N45SQ2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI0A4N45SQ2
MOSFET, SO-8, N+N, 450V, 0.4A, 4.5Ω, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI0A4N45SQ2
DI0A4N45SQ2 Dual
Type SMD
Package SO-8
Qualification Industrial Grade
Config Dual
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N+N
Drain Source Voltage VDS 450 V
Drain Current 25°C ID 0.400 A
On-Resistance 1 RDSon1 4.5000 Ω
@ ID 0.400 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 2.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 1.600 A
Threshold Voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-On Delay Time tD(on) 7 ns
Rise Time tr 4 ns
Turn-Off Delay Time tD(off) 9 ns
Fall Time tf 12 ns
Total Gate Charge (10V) Qg (10V) 7.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 3 nC
Single pulse avalanche energy Eas 0.2 mJ
Input Capacitance Ciss 160 pF
Output Capacitance Coss 28 pF
Reverse Transfer Capacitance Crss 5 pF
Reverse recovery charge Qrr 530 nC

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