DI0A4N45SQ2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI0A4N45SQ2
MOSFET, SO-8, N+N, 450V, 0.4A, 4.5Ω, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI0A4N45SQ2
DI0A4N45SQ2 Dual
Type SMD
Package SO-8
Qualification Industrial Grade
Config Dual
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+N
Drain source voltage VDS 450 V
Drain current 25°C ID 0.400 A
On-resistance 1 RDSon1 4.5000 Ω
@ ID 0.400 A
@ VGS 10 V
Drain current 100°C ID
On-resistance 2 RDSon2
@ ID
@ VGS
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 2.000 W
@ TLoc
Location
Avalanche Yes
Peak drain current IDM 1.600 A
Threshold voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-on delay time tD(on) 7 ns
Rise time tr 4 ns
Turn-off delay time tD(off) 9 ns
Fall time tf 12 ns
Total gate charge (10V) Qg (10V) 7.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas 0.2 mJ
Input capacitance Ciss 160 pF
Output capacitance Coss 28 pF
Reverse transfer capacitance Crss 5 pF
Reverse recovery charge Qrr 530 nC

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