DI080N06PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI080N06PQ
MOSFET, PowerQFN 5x6, N, 65V, 105A, 3mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI080N06PQ
DI080N06PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 65 V
Drain Current 25°C ID 105.000 A
On-Resistance 1 RDSon1 0.0045 Ω
@ ID 20.000 A
@ VGS 4.5 V
Drain Current 100°C ID
On-Resistance 2 RDSon2 0.0030 Ω
@ ID 30.000 A
@ VGS 10 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 80.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 480.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 26 ns
Rise Time tr 44 ns
Turn-Off Delay Time tD(off) 25 ns
Fall Time tf 6 ns
Total Gate Charge (10V) Qg (10V) 78.5 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 18 nC
Single pulse avalanche energy Eas 185.4 mJ
Input Capacitance Ciss 4128 pF
Output Capacitance Coss 1245 pF
Reverse Transfer Capacitance Crss 34 pF
Reverse recovery charge Qrr 33 nC

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