DI080N03PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI080N03PQ
MOSFET, PowerQFN 5x6, N, 30V, 80A, 1.8mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI080N03PQ
DI080N03PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 30 V
Drain Current 25°C ID 80.000 A
On-Resistance 1 RDSon1 0.0018 Ω
@ ID 30 A
@ VGS 10 V
Drain Current 100°C ID 70.000 A
On-Resistance 2 RDSon2 0.0025 Ω
@ ID 15.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 35.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 420.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 43 ns
Rise Time tr 71 ns
Turn-Off Delay Time tD(off) 42 ns
Fall Time tf 12 ns
Total Gate Charge (10V) Qg (10V) 163.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 37 nC
Single pulse avalanche energy Eas 150.0 mJ
Input Capacitance Ciss 7460 pF
Output Capacitance Coss 890 pF
Reverse Transfer Capacitance Crss 730 pF
Reverse recovery charge Qrr 15 nC

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