DI075SIC055D7
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DI075SIC055D7 750V SiC MOSFET
SiC MOSFET, TO-263-7L, N, 53A, 750V, 55mΩ, 175°C
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
RoHS / REACH Yes

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Technical data

Article number DI075SIC055D7
DI075SIC055D7 Single
Type Wire-lead
Package TO-263-7L
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
 
Polarity pol N
Drain Current 25°C ID 53.000 A
Drain Current 100°C ID 37.000 A
Drain Source Voltage VDS 750 V
On-Resistance 1 RDSon1 0.05500 Ω
@ ID 20.000 A
@ VGS 18 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 214.000 W
@ TLoc 25 °C
Location
Peak Drain Current IDM 132.000 A
Threshold Voltage VGSth min 1.9 V
VGSth max 4.8 V
Rise Time tr 12 ns
Fall Time tf 8 ns
Total Switching Energy Etotal 0.00 mJ
ESD protection ESD protected No
On-Resistance 2 RDSon2
@ ID
@ VGS
Turn-On Delay Time tD(on) 10 ns
Turn-Off Delay Time tD(off) 25 ns
Total Gate Charge (4.5V) Qg (4.5V)
Total Gate Charge (10V) Qg (10V) 70.0 nC
Gate-Drain Charge Qgd 18 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 2320 pF
Output Capacitance Coss 150 pF
Reverse Transfer Capacitance Crss 14 pF
Reverse recovery charge Qrr 340.0 nC
Avalanche Avalanche No

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