DI067P06PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI067P06PQ
MOSFET, PowerQFN 5x6, P, -60V, -67A, 13.5mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS / REACH Yes

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Technical data

Article number DI067P06PQ
DI067P06PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol P
Drain Source Voltage VDS -60 V
Drain Current 25°C ID -67.000 A
On-Resistance 1 RDSon1 0.0135 Ω
@ ID -20 A
@ VGS -10 V
Drain Current 100°C ID -42.000 A
On-Resistance 2 RDSon2 0.0170 Ω
@ ID -20.000 A
@ VGS -4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 110.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 280.000 A
Threshold Voltage VGSth min -1.3 V
VGSth max -2.6 V
Turn-On Delay Time tD(on) 17 ns
Rise Time tr 19 ns
Turn-Off Delay Time tD(off) 56 ns
Fall Time tf 35 ns
Total Gate Charge (10V) Qg (10V) 62.1 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 17 nC
Single pulse avalanche energy Eas 560.0 mJ
Input Capacitance Ciss 5505 pF
Output Capacitance Coss 325 pF
Reverse Transfer Capacitance Crss 275 pF
Reverse recovery charge Qrr 71 nC

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