DI065N06PT
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI065N06PT
MOSFET, PowerQFN 3x3, N, 65V, 65A, 5mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI065N06PT
DI065N06PT Single
Type SMD
Package PowerQFN 3x3
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 65 V
Drain Current 25°C ID 65.000 A
On-Resistance 1 RDSon1 0.0050 Ω
@ ID 20 A
@ VGS 10 V
Drain Current 100°C ID 41.000 A
On-Resistance 2 RDSon2 0.0075 Ω
@ ID 15.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 39.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 300.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 15 ns
Rise Time tr 26 ns
Turn-Off Delay Time tD(off) 15 ns
Fall Time tf 3 ns
Total Gate Charge (10V) Qg (10V) 37.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 10 nC
Single pulse avalanche energy Eas 65.0 mJ
Input Capacitance Ciss 1617 pF
Output Capacitance Coss 504 pF
Reverse Transfer Capacitance Crss 22 pF
Reverse recovery charge Qrr 22 nC

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