DI050N04BPT-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI050N04BPT-AQ
MOSFET, PowerQFN 3x3, N, 40V, 50A, 7mΩ, 175°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS / REACH Yes

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Technical data

Article number DI050N04BPT-AQ
DI050N04BPT-AQ Single
Type SMD
Package PowerQFN 3x3
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 50.000 A
On-Resistance 1 RDSon1 0.0070 Ω
@ ID 30.000 A
@ VGS 10 V
Drain Current 100°C ID 35.000 A
On-Resistance 2 RDSon2 0.0120 Ω
@ ID 20.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 35.700 W
@ TLoc 25 °C
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 200.000 A
Threshold Voltage VGSth min 1.1 V
VGSth max 2.4 V
Turn-On Delay Time tD(on) 17 ns
Rise Time tr 64 ns
Turn-Off Delay Time tD(off) 21 ns
Fall Time tf 3 ns
Total Gate Charge (10V) Qg (10V) 48.0 nC
Total Gate Charge (4.5V) Qg (4.5V) 22.5 nC
Gate-Drain Charge Qgd 10 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 2280 pF
Output Capacitance Coss 173 pF
Reverse Transfer Capacitance Crss 119 pF
Reverse recovery charge Qrr 8 nC

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