DI049N06PTK-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI049N06PTK-AQ Gate protected
MOSFET, PowerQFN 3x3, N, 65V, 49A, 6.1mΩ, 150°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI049N06PTK-AQ
DI049N06PTK-AQ Single Protected
Type SMD
Package PowerQFN 3x3
Qualification AEC-Q101
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected Yes
Polarity pol N
Drain Source Voltage VDS 65 V
Drain Current 25°C ID 49.000 A
On-Resistance 1 RDSon1 0.0061 Ω
@ ID 20 A
@ VGS 10 V
Drain Current 100°C ID 32.000 A
On-Resistance 2 RDSon2 0.0100 Ω
@ ID 10.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 25.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 300.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 25.0 V
Turn-On Delay Time tD(on) 14 ns
Rise Time tr 3 ns
Turn-Off Delay Time tD(off) 13 ns
Fall Time tf 16 ns
Total Gate Charge (10V) Qg (10V) 31.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 8 nC
Single pulse avalanche energy Eas 4.1 mJ
Input Capacitance Ciss 1691 pF
Output Capacitance Coss 604 pF
Reverse Transfer Capacitance Crss 37 pF
Reverse recovery charge Qrr 8 nC

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