DI048N04PQA2-AQ
MOSFETs (Field Effect Transistors)

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Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI048N04PQA2-AQ
MOSFET, PowerQFN 5x6-Dual, N+N, 40V, 54.3A, 9.5mΩ, 175°C, AEC-Q101
Minimum order quantity 5.000
Stock 5.000
Customs Tariff Number 85412900
RoHS / REACH Yes

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Technical data

Article number DI048N04PQA2-AQ
DI048N04PQA2-AQ Dual
Type SMD
Package PowerQFN 5x6-Dual
Qualification AEC-Q101
Config Dual
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N+N
Drain Source Voltage VDS 40 V
Drain Current 25°C ID 54.300 A
On-Resistance 1 RDSon1 0.0065 Ω
@ ID 20.000 A
@ VGS 10 V
Drain Current 100°C ID 38.000 A
On-Resistance 2 RDSon2 0.0095 Ω
@ ID 15.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 38.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 120.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.3 V
Turn-On Delay Time tD(on) 6 ns
Rise Time tr 40 ns
Turn-Off Delay Time tD(off) 21 ns
Fall Time tf 13 ns
Total Gate Charge (10V) Qg (10V) 20.0 nC
Total Gate Charge (4.5V) Qg (4.5V) 10.0 nC
Gate-Drain Charge Qgd 5 nC
Single pulse avalanche energy Eas 49.6 mJ
Input Capacitance Ciss 939 pF
Output Capacitance Coss 379 pF
Reverse Transfer Capacitance Crss 50 pF
Reverse recovery charge Qrr 13 nC

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