DI040N10D1-AQ
MOSFETs (Field Effect Transistors)

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Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI040N10D1-AQ
MOSFET, DPAK, N, 100V, 40A, 17mΩ, 175°C, AEC-Q101
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI040N10D1-AQ
DI040N10D1-AQ Single
Type SMD
Package TO-252AA/D-PAK
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 40.000 A
On-Resistance 1 RDSon1
@ ID
@ VGS
Drain Current 100°C ID 28.000 A
On-Resistance 2 RDSon2 0.0170 Ω
@ ID 28.000 A
@ VGS 10 V
Junction Temperature Tjmax 175 °C
Power Dissipation Ptot 37.500 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM 160.000 A
Threshold Voltage VGSth min 3.0 V
VGSth max 4.5 V
Turn-On Delay Time tD(on)
Rise Time tr
Turn-Off Delay Time tD(off)
Fall Time tf
Total Gate Charge (10V) Qg (10V) 15.5 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 0 nC
Single pulse avalanche energy Eas 64.0 mJ
Input Capacitance Ciss 1192 pF
Output Capacitance Coss 421 pF
Reverse Transfer Capacitance Crss 34 pF
Reverse recovery charge Qrr 32 nC

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