DI038N04PQ2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI038N04PQ2
MOSFET, PowerQFN 5x6-Dual, N+N, 45V, 38A, 10mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI038N04PQ2
DI038N04PQ2 Dual
Type SMD
Package PowerQFN 5x6-Dual
Qualification Industrial Grade
Config Dual
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+N
Drain source voltage VDS 45 V
Drain current 25°C ID 38.000 A
On-resistance 1 RDSon1 0.0100 Ω
@ ID 10 A
@ VGS 10 V
Drain current 100°C ID 23.000 A
On-resistance 2 RDSon2 0.0180 Ω
@ ID 8.000 A
@ VGS 4.5 V
Junction temperature Tjmin
Tjmax 150 °C
Power dissipation Ptot 31.000 W
@ TLoc
Location
Avalanche Yes
Peak drain current IDM 160.000 A
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 10 ns
Rise time tr 16 ns
Turn-off delay time tD(off) 9 ns
Fall time tf 2 ns
Total gate charge (10V) Qg (10V) 15.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas 36.0 mJ
Input capacitance Ciss 830 pF
Output capacitance Coss 260 pF
Reverse transfer capacitance Crss 20 pF
Reverse recovery charge Qrr 7 nC

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