DI028P03PT
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI028P03PT
MOSFET, PowerQFN 3x3, P, -30V, -28A, 6.7mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI028P03PT
DI028P03PT Single
Type SMD
Package PowerQFN 3x3
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol P
Drain Source Voltage VDS -30 V
Drain Current 25°C ID -28.000 A
On-Resistance 1 RDSon1 0.0067 Ω
@ ID -20 A
@ VGS -10 V
Drain Current 100°C ID -17.000 A
On-Resistance 2 RDSon2 0.0170 Ω
@ ID -20.000 A
@ VGS -4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 40.000 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM -80.000 A
Threshold Voltage VGSth min -1 V
VGSth max -2.5 V
Turn-On Delay Time tD(on) 11 ns
Rise Time tr 9 ns
Turn-Off Delay Time tD(off) 24 ns
Fall Time tf 12 ns
Total Gate Charge (10V) Qg (10V) 30.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 10 nC
Single pulse avalanche energy Eas
Input Capacitance Ciss 2060 pF
Output Capacitance Coss 370 pF
Reverse Transfer Capacitance Crss 295 pF
Reverse recovery charge Qrr 40 nC

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