DI028N10PQ2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI028N10PQ2
MOSFET, PowerQFN 5x6-Dual, N+N, 100V, 28A
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI028N10PQ2
DI028N10PQ2 Dual
Type SMD
Package PowerQFN 5x6-Dual
Qualification Industrial Grade
Config Dual
Life Cycle engineering sample
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N+N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 28.000 A
On-Resistance 1 RDSon1 0.0210 Ω
@ ID 7 A
@ VGS 10 V
Drain Current 100°C ID
On-Resistance 2 RDSon2
@ ID
@ VGS
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 28.000 W
@ TLoc
Location
Avalanche Avalanche No
Peak Drain Current IDM 130.000 A
Threshold Voltage VGSth min
VGSth max 2.5 V
Turn-On Delay Time tD(on)
Rise Time tr
Turn-Off Delay Time tD(off)
Fall Time tf
Total Gate Charge (10V) Qg (10V)
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd
Single pulse avalanche energy Eas
Input Capacitance Ciss
Output Capacitance Coss
Reverse Transfer Capacitance Crss
Reverse recovery charge Qrr

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