DI028N10PQ2-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI028N10PQ2-AQ
MOSFET, PowerQFN 5x6-Dual, N+N, 100V, 28A, 21mΩ, 150°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
Origin CN
RoHS / REACH Yes

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Technical data

Article number DI028N10PQ2-AQ
DI028N10PQ2-AQ Dual
Type SMD
Package PowerQFN 5x6-Dual
Qualification AEC-Q101
Config Dual
Life Cycle active
ESD sensitive No
 
ESD protection ESD protected No
Polarity pol N+N
Drain Source Voltage VDS 100 V
Drain Current 25°C ID 28.000 A
On-Resistance 1 RDSon1 0.0210 Ω
@ ID 7 A
@ VGS 10 V
Drain Current 100°C ID 18.000 A
On-Resistance 2 RDSon2 0.0260 Ω
@ ID 5.000 A
@ VGS 4.5 V
Junction Temperature Tjmax 150 °C
Power Dissipation Ptot 28.000 W
@ TLoc
Location
Avalanche Avalanche Yes
Peak Drain Current IDM 130.000 A
Threshold Voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-On Delay Time tD(on) 12 ns
Rise Time tr 4 ns
Turn-Off Delay Time tD(off) 11 ns
Fall Time tf 4 ns
Total Gate Charge (10V) Qg (10V) 22.0 nC
Total Gate Charge (4.5V) Qg (4.5V)
Gate-Drain Charge Qgd 6 nC
Single pulse avalanche energy Eas 17.0 mJ
Input Capacitance Ciss 1028 pF
Output Capacitance Coss 170 pF
Reverse Transfer Capacitance Crss 7 pF
Reverse recovery charge Qrr 30 nC

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