DI020P06PT
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI020P06PT
MOSFET, PowerQFN 3x3, P, -60V, -20A, 45mΩ, 175°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Distributor Availability

Technical data

Article number DI020P06PT
DI020P06PT Single
Type SMD
Package PowerQFN 3x3
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -60 V
Drain current 25°C ID -20.000 A
On-resistance 1 RDSon1 0.0450
@ ID -10 A
@ VGS -10 V
Drain current 100°C ID -12.600 A
On-resistance 2 RDSon2 0.0500
@ ID -8.000 A
@ VGS -4.5 V
Junction temperature Tjmin
Tjmax 175 °C
Power dissipation Ptot 35.700 W
@ TLoc
Location
Avalanche Yes
Peak drain current IDM -70.000 A
@ tp
Threshold voltage VGSth min -1 V
VGSth max -2.5 V
Turn-on delay time tD(on) 11 ns
Rise time tr 18 ns
Turn-off delay time tD(off) 25 ns
Fall time tf 4 ns
Total gate charge (10V) Qg (10V) 34.0 nC
Total gate charge (4.5V) Qg (4.5V) 16.0 nC
Gate-drain charge Qgd 5 nC
Single pulse avalanche energy Eas 26.4 mJ
Input capacitance Ciss 2089 pF
Output capacitance Coss 99 pF
Reverse transfer capacitance Crss 50 pF
Reverse recovery charge Qrr 10 nC
Case flammability UL94-V0 No
Net weight mnet
Marking Marking
Thermal resistance junction RTH
Location
UL recognized UL-Recognition
Thermal resistance junction (b) RTH
Location
Storage temperature Tsmin
Tsmax
Solder & Assembly Solder & Assembly
Gate source leakage current IGSS
@ VGS
Drain source leakage current IDSS
@ VDS
Gate source voltage DC VGSS
Gate source voltage ESD VGSS
Forward transconductance gfs
Intrinsic gate resistance RGi

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